IR2117STRPBF vs IRS21834STRPBF Perbandingan

Perbandingan bersamaan detil IR2117STRPBF dari Infineon dan IRS21834STRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IR2117STRPBF IRS21834STRPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Configuration High-Side Single Channel Half-Bridge
Fungsi Gate Driver, Non-Inverting —
Input Logic Compatibility CMOS / TTL —
Jumlah Output 1 —
Driven Device N-Channel MOSFET / IGBT —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Floating Channel Offset Voltage up to +600 V —
Peak Source Current (IOUT+) 250 mA —
Peak Sink Current (IOUT-) 500 mA —
Propagation Delay (Ton/Toff) 125 ns (max) —
Waktu naik 80 ns (typ) —
Waktu Menurun 40 ns (typ) —
Undervoltage Lockout (UVLO) Yes —
Negative Transient Voltage Tolerance Yes, dV/dt immune dV/dt immune
Rentang Suhu Kerja -40 C to +125 C -40C to +125C
Paket / Case 8-SOIC (0.154 inch / 3.90 mm width) —
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant
Lead-Free Yes Yes
Level MSL MSL3 (per JEDEC J-STD-020) 1 (unlimited)
Number of Drivers — 2 (high-side + low-side)
Input Logic — Inverting, Non-Inverting with Shutdown
Maximum Offset Voltage (High-Side) — 600 V
Gate Drive Supply (VCC, VBS) — 10 V to 20 V
Source Current (typ.) — 1.9 A
Sink Current (typ.) — 2.3 A
Propagation Delay (typ.) — 200 ns
Delay Matching (max) — ±50 ns
Undervoltage Lockout (VCC, VBS) — Yes
Paket — 14-SOIC (SOIC-14)

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