IR2117STRPBF vs IRS21834STRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IR2117STRPBF sa pamamagitan ng Infineon at IRS21834STRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRS21834STRPBF IRS21834STRPBF - 600V Half-Bridge Gate Driver | Infineon

IRS21834STRPBF - 600V Half-Bridge Gate Driver | Infineon

IRS21834STRPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IR2117STRPBF IRS21834STRPBF
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Configuration High-Side Single Channel Half-Bridge
Fungsi Gate Driver, Non-Inverting —
Input Logic Compatibility CMOS / TTL —
Bilang ng Outputs 1 —
Driven Device N-Channel MOSFET / IGBT —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Floating Channel Offset Voltage up to +600 V —
Peak Source Current (IOUT+) 250 mA —
Peak Sink Current (IOUT-) 500 mA —
Propagation Delay (Ton/Toff) 125 ns (max) —
Oras ng Pagtaas 80 ns (typ) —
Time ng Pagbaba 40 ns (typ) —
Undervoltage Lockout (UVLO) Yes —
Negative Transient Voltage Tolerance Yes, dV/dt immune dV/dt immune
Hanay ng Temperature na Operasyon -40 C to +125 C -40C to +125C
Packhaging / Kaso 8-SOIC (0.154 inch / 3.90 mm width) —
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS Compliant Compliant
Lead-Free Yes Yes
Level ng MSL MSL3 (per JEDEC J-STD-020) 1 (unlimited)
Number of Drivers — 2 (high-side + low-side)
Input Logic — Inverting, Non-Inverting with Shutdown
Maximum Offset Voltage (High-Side) — 600 V
Gate Drive Supply (VCC, VBS) — 10 V to 20 V
Source Current (typ.) — 1.9 A
Sink Current (typ.) — 2.3 A
Propagation Delay (typ.) — 200 ns
Delay Matching (max) — ±50 ns
Undervoltage Lockout (VCC, VBS) — Yes
Packhaging — 14-SOIC (SOIC-14)

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