IR2117STRPBF vs IRS21834STRPBF 比較

詳細並排比較 IR2117STRPBF 由 Infineon 與 IRS21834STRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRS21834STRPBF IRS21834STRPBF - 600V Half-Bridge Gate Driver | Infineon

IRS21834STRPBF - 600V Half-Bridge Gate Driver | Infineon

IRS21834STRPBF ✓ 啟用中

規格比較

參數 IR2117STRPBF IRS21834STRPBF
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Configuration High-Side Single Channel Half-Bridge
功能 Gate Driver, Non-Inverting —
Input Logic Compatibility CMOS / TTL —
輸出數量 1 —
Driven Device N-Channel MOSFET / IGBT —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Floating Channel Offset Voltage up to +600 V —
Peak Source Current (IOUT+) 250 mA —
Peak Sink Current (IOUT-) 500 mA —
Propagation Delay (Ton/Toff) 125 ns (max) —
上升時間 80 ns (typ) —
下降時間 40 ns (typ) —
Undervoltage Lockout (UVLO) Yes —
Negative Transient Voltage Tolerance Yes, dV/dt immune dV/dt immune
工作溫度範圍 -40 C to +125 C -40C to +125C
封裝 / 外殼 8-SOIC (0.154 inch / 3.90 mm width) —
安裝類型 Surface Mount Surface Mount
RoHS 狀態 Compliant Compliant
Lead-Free Yes Yes
MSL 等級 MSL3 (per JEDEC J-STD-020) 1 (unlimited)
Number of Drivers — 2 (high-side + low-side)
Input Logic — Inverting, Non-Inverting with Shutdown
Maximum Offset Voltage (High-Side) — 600 V
Gate Drive Supply (VCC, VBS) — 10 V to 20 V
Source Current (typ.) — 1.9 A
Sink Current (typ.) — 2.3 A
Propagation Delay (typ.) — 200 ns
Delay Matching (max) — ±50 ns
Undervoltage Lockout (VCC, VBS) — Yes
封裝 — 14-SOIC (SOIC-14)

資料表與資源

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