IR2117STRPBF vs IRS21834STRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IR2117STRPBF disebabkan oleh Infineon dan IRS21834STRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IR2117STRPBF IRS21834STRPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Configuration High-Side Single Channel Half-Bridge
Fungsi Gate Driver, Non-Inverting —
Input Logic Compatibility CMOS / TTL —
Bilangan Output 1 —
Driven Device N-Channel MOSFET / IGBT —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Floating Channel Offset Voltage up to +600 V —
Peak Source Current (IOUT+) 250 mA —
Peak Sink Current (IOUT-) 500 mA —
Propagation Delay (Ton/Toff) 125 ns (max) —
Masa Pertambahan 80 ns (typ) —
Masa jatuh 40 ns (typ) —
Undervoltage Lockout (UVLO) Yes —
Negative Transient Voltage Tolerance Yes, dV/dt immune dV/dt immune
Gambaran Suhu Operasi -40 C to +125 C -40C to +125C
Kemasan / Case 8-SOIC (0.154 inch / 3.90 mm width) —
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant Compliant
Lead-Free Yes Yes
Aras MSL MSL3 (per JEDEC J-STD-020) 1 (unlimited)
Number of Drivers — 2 (high-side + low-side)
Input Logic — Inverting, Non-Inverting with Shutdown
Maximum Offset Voltage (High-Side) — 600 V
Gate Drive Supply (VCC, VBS) — 10 V to 20 V
Source Current (typ.) — 1.9 A
Sink Current (typ.) — 2.3 A
Propagation Delay (typ.) — 200 ns
Delay Matching (max) — ±50 ns
Undervoltage Lockout (VCC, VBS) — Yes
Kemasan — 14-SOIC (SOIC-14)

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