IRS21834STRPBF vs IR2117STRPBF Perbandingan

Perbandingan bersamaan detil IRS21834STRPBF dari Infineon dan IR2117STRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRS21834STRPBF IR2117STRPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Configuration Half-Bridge High-Side Single Channel
Number of Drivers 2 (high-side + low-side) —
Input Logic Inverting, Non-Inverting with Shutdown —
Maximum Offset Voltage (High-Side) 600 V —
Gate Drive Supply (VCC, VBS) 10 V to 20 V —
Source Current (typ.) 1.9 A —
Sink Current (typ.) 2.3 A —
Propagation Delay (typ.) 200 ns —
Delay Matching (max) ±50 ns —
Undervoltage Lockout (VCC, VBS) Yes —
Negative Transient Voltage Tolerance dV/dt immune Yes, dV/dt immune
Rentang Suhu Kerja -40C to +125C -40 C to +125 C
Paket 14-SOIC (SOIC-14) —
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 (unlimited) MSL3 (per JEDEC J-STD-020)
Status RoHS Compliant Compliant
Lead-Free Yes Yes
Fungsi — Gate Driver, Non-Inverting
Input Logic Compatibility — CMOS / TTL
Jumlah Output — 1
Driven Device — N-Channel MOSFET / IGBT
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Floating Channel Offset Voltage — up to +600 V
Peak Source Current (IOUT+) — 250 mA
Peak Sink Current (IOUT-) — 500 mA
Propagation Delay (Ton/Toff) — 125 ns (max)
Waktu naik — 80 ns (typ)
Waktu Menurun — 40 ns (typ)
Undervoltage Lockout (UVLO) — Yes
Paket / Case — 8-SOIC (0.154 inch / 3.90 mm width)

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon