IRS21834STRPBF vs IR2117STRPBF 比較

詳細並排比較 IRS21834STRPBF 由 Infineon 與 IR2117STRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRS21834STRPBF IRS21834STRPBF - 600V Half-Bridge Gate Driver | Infineon

IRS21834STRPBF - 600V Half-Bridge Gate Driver | Infineon

IRS21834STRPBF ✓ 啟用中

規格比較

參數 IRS21834STRPBF IR2117STRPBF
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Configuration Half-Bridge High-Side Single Channel
Number of Drivers 2 (high-side + low-side) —
Input Logic Inverting, Non-Inverting with Shutdown —
Maximum Offset Voltage (High-Side) 600 V —
Gate Drive Supply (VCC, VBS) 10 V to 20 V —
Source Current (typ.) 1.9 A —
Sink Current (typ.) 2.3 A —
Propagation Delay (typ.) 200 ns —
Delay Matching (max) ±50 ns —
Undervoltage Lockout (VCC, VBS) Yes —
Negative Transient Voltage Tolerance dV/dt immune Yes, dV/dt immune
工作溫度範圍 -40C to +125C -40 C to +125 C
封裝 14-SOIC (SOIC-14) —
安裝類型 Surface Mount Surface Mount
MSL 等級 1 (unlimited) MSL3 (per JEDEC J-STD-020)
RoHS 狀態 Compliant Compliant
Lead-Free Yes Yes
功能 — Gate Driver, Non-Inverting
Input Logic Compatibility — CMOS / TTL
輸出數量 — 1
Driven Device — N-Channel MOSFET / IGBT
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Floating Channel Offset Voltage — up to +600 V
Peak Source Current (IOUT+) — 250 mA
Peak Sink Current (IOUT-) — 500 mA
Propagation Delay (Ton/Toff) — 125 ns (max)
上升時間 — 80 ns (typ)
下降時間 — 40 ns (typ)
Undervoltage Lockout (UVLO) — Yes
封裝 / 外殼 — 8-SOIC (0.154 inch / 3.90 mm width)

資料表與資源

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