IRS21834STRPBF vs IR2117STRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRS21834STRPBF sa pamamagitan ng Infineon at IR2117STRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRS21834STRPBF IRS21834STRPBF - 600V Half-Bridge Gate Driver | Infineon

IRS21834STRPBF - 600V Half-Bridge Gate Driver | Infineon

IRS21834STRPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRS21834STRPBF IR2117STRPBF
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Configuration Half-Bridge High-Side Single Channel
Number of Drivers 2 (high-side + low-side) —
Input Logic Inverting, Non-Inverting with Shutdown —
Maximum Offset Voltage (High-Side) 600 V —
Gate Drive Supply (VCC, VBS) 10 V to 20 V —
Source Current (typ.) 1.9 A —
Sink Current (typ.) 2.3 A —
Propagation Delay (typ.) 200 ns —
Delay Matching (max) ±50 ns —
Undervoltage Lockout (VCC, VBS) Yes —
Negative Transient Voltage Tolerance dV/dt immune Yes, dV/dt immune
Hanay ng Temperature na Operasyon -40C to +125C -40 C to +125 C
Packhaging 14-SOIC (SOIC-14) —
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL 1 (unlimited) MSL3 (per JEDEC J-STD-020)
Tindminan RoHS Compliant Compliant
Lead-Free Yes Yes
Fungsi — Gate Driver, Non-Inverting
Input Logic Compatibility — CMOS / TTL
Bilang ng Outputs — 1
Driven Device — N-Channel MOSFET / IGBT
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Floating Channel Offset Voltage — up to +600 V
Peak Source Current (IOUT+) — 250 mA
Peak Sink Current (IOUT-) — 500 mA
Propagation Delay (Ton/Toff) — 125 ns (max)
Oras ng Pagtaas — 80 ns (typ)
Time ng Pagbaba — 40 ns (typ)
Undervoltage Lockout (UVLO) — Yes
Packhaging / Kaso — 8-SOIC (0.154 inch / 3.90 mm width)

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