K4A4G085WG-BCWE vs K4A4G085WD-BCRC Perbandingan
Perbandingan bersamaan detil K4A4G085WG-BCWE dari Samsung Electronics dan K4A4G085WD-BCRC dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K4A4G085WG-BCWE | K4A4G085WD-BCRC |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM (Volatile) | DDR4 SDRAM (D-die) |
| Ukuran Memori | 4 Gb | — |
| Memory Organization | 512M x 8 | — |
| Laju Data | 3200 Mbps/pin | 2400 Mb/s (PC2400) |
| Speed Class | DDR4-3200 | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Technology | D-die DDR4 | — |
| Paket | FBGA-78 (BCW) | FBGA-78 (TFBGA) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Antarmuka | Parallel (DDR4) | Parallel |
| Burst Length | BL8 | — |
| DLL Mode | DLL Enabled (per datasheet timing) | — |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | — |
| Refresh | [DATA_NEEDED: refresh rate specification] | [DATA_NEEDED: Refresh specification] |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS Status] |
| Packaging | Tray | — |
| Memory Density | — | 4 Gbit |
| Organisasi | — | 512M x 8 |
| Tegangan Pemuat | — | 1.2 V |
| Number of Terminals | — | 78 |
| Access Mode | — | Multi-bank page burst |
| Latensi CAS | — | [DATA_NEEDED: CAS Latency] |
| Rentang Suhu Kerja | — | [DATA_NEEDED: Operating Temperature Range] |
| Level MSL | — | [DATA_NEEDED: MSL Level] |