K4A8G165WC-BCRC vs E3AD8G16A4-HR Perbandingan
Perbandingan bersamaan detil K4A8G165WC-BCRC dari Samsung Electro-Mechanics dan E3AD8G16A4-HR dari ELIXIR/NANYA. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electro-Mechanics
K4A8G165WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung
K4A8G165WC-BCRC ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | K4A8G165WC-BCRC | E3AD8G16A4-HR |
|---|---|---|
| Merek | Samsung Electro-Mechanics | ELIXIR/NANYA |
| Kategori | EEPROM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | In Stock | — |
| Harga Unit (USD) | $19,69 | — |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Ukuran Memori | 8 Gbit | — |
| Organisasi | 512M x 16 | 512M x 16 |
| Laju Data | 2400 Mbps | 3200 MT/s |
| Clock Frequency | 1333 MHz | — |
| Tegangan Pemuat | 1.2 V (1.14 V to 1.26 V) | 1.2 V |
| Antarmuka | Parallel, 16-bit DDR | — |
| Standby Current (Idle) | 2 mA | — |
| Operating Current | 64 mA | — |
| Suhu Kerja | 0 C to +95 C | 0C to +95C (TCASE) |
| Paket | 96-FBGA (TFBGA) | TFBGA-96 |
| Tipe Mounting | Surface Mount | Surface Mount |
| Fitur | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask | — |
| Die Generation | C-die | — |
| Memory Format | DRAM | — |
| Status RoHS | Compliant | — |
| Density | — | 8 Gb |
| Latensi CAS | — | 22 |
| Burst Length | — | 8 (BC4 optional) |
| Number of Banks | — | 16 (4 bank groups) |
| Refresh | — | Auto-refresh and self-refresh |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Speed Grade | — | DDR4-3200 |