K4A8G165WC-BCRC vs E3AD8G16A4-HR Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G165WC-BCRC disebabkan oleh Samsung Electro-Mechanics dan E3AD8G16A4-HR disebabkan oleh ELIXIR/NANYA. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electro-Mechanics
K4A8G165WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung
K4A8G165WC-BCRC ✓ Aktif
Pengandingan Spesifikasi
| Parametr | K4A8G165WC-BCRC | E3AD8G16A4-HR |
|---|---|---|
| Merek | Samsung Electro-Mechanics | ELIXIR/NANYA |
| Kategori | EEPROM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | In Stock | — |
| Harga Unit (USD) | $19.69 | — |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Saiz Ingatan | 8 Gbit | — |
| Organisasi | 512M x 16 | 512M x 16 |
| Kadar Data | 2400 Mbps | 3200 MT/s |
| Clock Frequency | 1333 MHz | — |
| Tegangan Pemberi Arus | 1.2 V (1.14 V to 1.26 V) | 1.2 V |
| Antaramuka | Parallel, 16-bit DDR | — |
| Standby Current (Idle) | 2 mA | — |
| Operating Current | 64 mA | — |
| Suhu Operasi | 0 C to +95 C | 0C to +95C (TCASE) |
| Kemasan | 96-FBGA (TFBGA) | TFBGA-96 |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Ciri-ciri | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask | — |
| Die Generation | C-die | — |
| Memory Format | DRAM | — |
| Status RoHS | Compliant | — |
| Density | — | 8 Gb |
| Latensi CAS | — | 22 |
| Burst Length | — | 8 (BC4 optional) |
| Number of Banks | — | 16 (4 bank groups) |
| Refresh | — | Auto-refresh and self-refresh |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Speed Grade | — | DDR4-3200 |