K4AAG085WM-BCWE vs K4AAG165WM-BCWE Perbandingan
Perbandingan bersamaan detil K4AAG085WM-BCWE dari Samsung Electronics dan K4AAG165WM-BCWE dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K4AAG085WM-BCWE | K4AAG165WM-BCWE |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | DRAM | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gb | 16 Gbit |
| Organisasi | 2G x 8 | 256M x 16 (1G x 16) |
| Laju Data | 3200 Mbps (DDR4-3200) | 3200 Mbps |
| Tegangan Pemuat | 1.2 V | — |
| Suhu Kerja | 0C to +85C | [DATA_NEEDED: temperature range for WM-BCWE] |
| Paket | 78FBGA | 78-ball FBGA |
| Tipe Mounting | Surface Mount | Surface Mount |
| Antarmuka | DDR4 (JEDEC-standard) | Parallel (DDR4) |
| Bank Group Architecture | Yes (DDR4) | — |
| Speed Grade Suffix | -BCWE | — |
| Application Class | Memory IC / Storage Component | — |
| Power Reduction vs DDR3 | Approx. 25% lower (per Samsung DDR4 literature) | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Level MSL | [DATA_NEEDED: MSL level] | — |
| Supply Voltage VDD | — | 1.2 V |
| Supply Voltage VDDQ | — | 1.2 V |
| Access Time (Clock Cycle Time) | — | [DATA_NEEDED: tCK for BCWE bin] |
| Latensi CAS | — | [DATA_NEEDED: CL at 3200 Mbps] |
| Bank Groups | — | 4 (x16 configuration) |
| Burst Length | — | 8 |
| Die Revision | — | W (WM suffix) |
| Operating Frequency | — | 1600 MHz (DDR, 3200 Mbps) |