K4AAG085WM-BCWE vs K4AAG165WM-BCWE Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4AAG085WM-BCWE sa pamamagitan ng Samsung Electronics at K4AAG165WM-BCWE sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4AAG085WM-BCWE - 16Gb DDR4 3200Mbps 78FBGA | Samsung
K4AAG085WM-BCWE ✓ NakahandaSamsung Electronics
K4AAG165WM-BCWE - 16Gb DDR4-3200 SDRAM x16 | Samsung
K4AAG165WM-BCWE ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4AAG085WM-BCWE | K4AAG165WM-BCWE |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | DRAM | DRAM |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gb | 16 Gbit |
| Organisasyon | 2G x 8 | 256M x 16 (1G x 16) |
| Rate ng Data | 3200 Mbps (DDR4-3200) | 3200 Mbps |
| Volte ng Pagbibigay | 1.2 V | — |
| Temperature na Operasyon | 0C to +85C | [DATA_NEEDED: temperature range for WM-BCWE] |
| Packhaging | 78FBGA | 78-ball FBGA |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Interface | DDR4 (JEDEC-standard) | Parallel (DDR4) |
| Bank Group Architecture | Yes (DDR4) | — |
| Speed Grade Suffix | -BCWE | — |
| Application Class | Memory IC / Storage Component | — |
| Power Reduction vs DDR3 | Approx. 25% lower (per Samsung DDR4 literature) | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Level ng MSL | [DATA_NEEDED: MSL level] | — |
| Supply Voltage VDD | — | 1.2 V |
| Supply Voltage VDDQ | — | 1.2 V |
| Access Time (Clock Cycle Time) | — | [DATA_NEEDED: tCK for BCWE bin] |
| Latensya ng CAS | — | [DATA_NEEDED: CL at 3200 Mbps] |
| Bank Groups | — | 4 (x16 configuration) |
| Burst Length | — | 8 |
| Die Revision | — | W (WM suffix) |
| Operating Frequency | — | 1600 MHz (DDR, 3200 Mbps) |