K4AAG085WM-BCWE vs K4AAG165WM-BCWE Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4AAG085WM-BCWE disebabkan oleh Samsung Electronics dan K4AAG165WM-BCWE disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4AAG085WM-BCWE | K4AAG165WM-BCWE |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | DRAM | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gb | 16 Gbit |
| Organisasi | 2G x 8 | 256M x 16 (1G x 16) |
| Kadar Data | 3200 Mbps (DDR4-3200) | 3200 Mbps |
| Tegangan Pemberi Arus | 1.2 V | — |
| Suhu Operasi | 0C to +85C | [DATA_NEEDED: temperature range for WM-BCWE] |
| Kemasan | 78FBGA | 78-ball FBGA |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Antaramuka | DDR4 (JEDEC-standard) | Parallel (DDR4) |
| Bank Group Architecture | Yes (DDR4) | — |
| Speed Grade Suffix | -BCWE | — |
| Application Class | Memory IC / Storage Component | — |
| Power Reduction vs DDR3 | Approx. 25% lower (per Samsung DDR4 literature) | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Aras MSL | [DATA_NEEDED: MSL level] | — |
| Supply Voltage VDD | — | 1.2 V |
| Supply Voltage VDDQ | — | 1.2 V |
| Access Time (Clock Cycle Time) | — | [DATA_NEEDED: tCK for BCWE bin] |
| Latensi CAS | — | [DATA_NEEDED: CL at 3200 Mbps] |
| Bank Groups | — | 4 (x16 configuration) |
| Burst Length | — | 8 |
| Die Revision | — | W (WM suffix) |
| Operating Frequency | — | 1600 MHz (DDR, 3200 Mbps) |