K4AAG085WM-BCWE vs K4AAG165WM-BCWE 比較
詳細並排比較 K4AAG085WM-BCWE 由 Samsung Electronics 與 K4AAG165WM-BCWE 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4AAG085WM-BCWE | K4AAG165WM-BCWE |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | DRAM | DRAM |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gb | 16 Gbit |
| 組織 | 2G x 8 | 256M x 16 (1G x 16) |
| 資料速率 | 3200 Mbps (DDR4-3200) | 3200 Mbps |
| 供應電壓 | 1.2 V | — |
| 工作溫度 | 0C to +85C | [DATA_NEEDED: temperature range for WM-BCWE] |
| 封裝 | 78FBGA | 78-ball FBGA |
| 安裝類型 | Surface Mount | Surface Mount |
| 介面 | DDR4 (JEDEC-standard) | Parallel (DDR4) |
| Bank Group Architecture | Yes (DDR4) | — |
| Speed Grade Suffix | -BCWE | — |
| Application Class | Memory IC / Storage Component | — |
| Power Reduction vs DDR3 | Approx. 25% lower (per Samsung DDR4 literature) | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | Compliant |
| MSL 等級 | [DATA_NEEDED: MSL level] | — |
| Supply Voltage VDD | — | 1.2 V |
| Supply Voltage VDDQ | — | 1.2 V |
| Access Time (Clock Cycle Time) | — | [DATA_NEEDED: tCK for BCWE bin] |
| CAS 延遲 | — | [DATA_NEEDED: CL at 3200 Mbps] |
| Bank Groups | — | 4 (x16 configuration) |
| Burst Length | — | 8 |
| Die Revision | — | W (WM suffix) |
| Operating Frequency | — | 1600 MHz (DDR, 3200 Mbps) |