K4RAH165VB-BCQK vs K4RHE165VB-BCWM Perbandingan
Perbandingan bersamaan detil K4RAH165VB-BCQK dari Samsung Electronics dan K4RHE165VB-BCWM dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4RAH165VB-BCQK - 16Gb DDR5 SDRAM 4800Mbps 1.1V | Samsung
K4RAH165VB-BCQK ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | K4RAH165VB-BCQK | K4RHE165VB-BCWM |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR5 SDRAM | DDR5 SDRAM |
| Ukuran Memori | 16 Gb | — |
| Memory Organization | 1G x 16 | — |
| Memory Interface | Parallel | — |
| Laju Data | 4800 Mbps | 5600 Mbps |
| Supply Voltage (VDD) | 1.1 V | — |
| Error Correction | On-die ECC | — |
| Fitur | Auto self-refresh, asynchronous reset, on-chip ECC, write leveling, CRC, ZQ calibration | — |
| Suhu Kerja | 0C to +85C | 0 C to +85 C |
| Paket | 106-ball FBGA | 106 FBGA |
| Tipe Mounting | Surface Mount | Surface Mount |
| Memory Format | DRAM (volatile) | — |
| Packaging | Tray | — |
| Status Lingkungan Hidup | Active | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Unit Price | [DATA_NEEDED: unit price] | — |
| Density | — | 24 Gb |
| Organisasi | — | 1G x 16 |
| Tegangan Pemuat | — | 1.1 V |
| Product Status | — | Mass Production |
| Antarmuka | — | Parallel, DDR5 |
| Generation | — | DDR5 |
| Application Segment | — | DDR5 memory modules and HPC systems |
| Speed Grade Suffix | — | BCWM |
| tCK (Clock Period) | — | [DATA_NEEDED: clock period] |
| Latensi CAS | — | [DATA_NEEDED: CAS latency] |