K4RAH165VB-BCQK vs K4RHE165VB-BCWM Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4RAH165VB-BCQK sa pamamagitan ng Samsung Electronics at K4RHE165VB-BCWM sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4RAH165VB-BCQK - 16Gb DDR5 SDRAM 4800Mbps 1.1V | Samsung
K4RAH165VB-BCQK ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4RAH165VB-BCQK | K4RHE165VB-BCWM |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR5 SDRAM | DDR5 SDRAM |
| Laki ng Memory | 16 Gb | — |
| Memory Organization | 1G x 16 | — |
| Memory Interface | Parallel | — |
| Rate ng Data | 4800 Mbps | 5600 Mbps |
| Supply Voltage (VDD) | 1.1 V | — |
| Error Correction | On-die ECC | — |
| Mga Karakteristika | Auto self-refresh, asynchronous reset, on-chip ECC, write leveling, CRC, ZQ calibration | — |
| Temperature na Operasyon | 0C to +85C | 0 C to +85 C |
| Packhaging | 106-ball FBGA | 106 FBGA |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Memory Format | DRAM (volatile) | — |
| Packaging | Tray | — |
| Katayuan ng Lifecycle | Active | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Unit Price | [DATA_NEEDED: unit price] | — |
| Density | — | 24 Gb |
| Organisasyon | — | 1G x 16 |
| Volte ng Pagbibigay | — | 1.1 V |
| Product Status | — | Mass Production |
| Interface | — | Parallel, DDR5 |
| Generation | — | DDR5 |
| Application Segment | — | DDR5 memory modules and HPC systems |
| Speed Grade Suffix | — | BCWM |
| tCK (Clock Period) | — | [DATA_NEEDED: clock period] |
| Latensya ng CAS | — | [DATA_NEEDED: CAS latency] |