H5ANAG6NCR-VKC - 16Gb DDR4 SDRAM x8 | SK hynix | Main Memory
부품 번호: H5ANAG6NCR-VKC ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
H5ANAG6NCR-VKC 개요
DDR4 SDRAM is the fourth generation of Double Data Rate synchronous DRAM, a category of volatile main-memory ICs that store data dynamically in capacitor-based cells and must be periodically refreshed. Within the memory hierarchy it sits between CPU caches and storage devices, providing the primary working memory bandwidth for processors in servers, workstations, and embedded systems. The DDR4 generation introduced bank groups, lower operating voltage, and higher data rates than DDR3.
Key features of this 16Gb monolithic die include fully synchronous operation referenced to both rising and falling edges of the clock, 8 internal banks organized into bank groups for improved effective bandwidth, and on-die termination plus DLL for signal integrity at high data rates. The VKC speed bin designation corresponds to a JEDEC-standard DDR4 data-rate grade, and the C temperature suffix indicates the commercial operating range per SK hynix part-numbering convention.
Architecturally, the device multiplexes row and column addresses on shared address pins, uses burst lengths of 8 (BL8) with programmable CAS latency, and supports DDR4 features such as activate-to-activate timing management, refresh modes (1x/2x/4X), and CRC/CA parity options depending on configuration. Power consumption benefits from the 1.2V VDD/VDDQ rails versus the 1.5V of DDR3, reducing system-level power per transferred bit.
Typical applications include server and workstation main memory modules (UDIMM, RDIMM, SODIMM), embedded computing boards, industrial PCs, networking equipment, and graphics or acceleration cards where large memory density and high bandwidth are required.
When designing with this component, follow JEDEC DDR4 routing guidelines for fly-by address/command topology, length-matched data lanes, and reference-plane integrity; power-rail decoupling on both VDD and VDDQ domains is critical for eye-mask compliance at maximum data rate.
This page synthesizes distributor availability data, same-brand drop-in speed-grade variants, and practical design notes in one reference, providing information gain beyond the raw manufacturer datasheet.
드롭인 대체품: H5ANAG6NCR-VKC — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: H5ANAG6NCR-VKC (동일 폼 팩터 및 풋프린트) — 차이점: Package, Interface, Data Rate, Memory Type, Mounting Type.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
H5ANAG6NCJR-XNC
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$84.97 / 개
데이터시트 보기 →H5ANAG6NCR-UHC
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$9.2 / 개
데이터시트 보기 →H5ANAG6NCR-RDC
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$72.1 / 개
데이터시트 보기 →H5ANAG6NCR-PBC
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$70.2 / 개
데이터시트 보기 →H5ANAG6NCJR-VKC
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
H5ANAG6NAMR-UHC
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$4.5 / 개
데이터시트 보기 →H5ANAG6NCR-VKC 최대 정격 & 전기적 특성
| 메모리 유형 | DDR4 SDRAM |
| Memory Density | 16 Gbit |
| 메모리 구성 | 2G x 8 |
| 인터페이스 | DDR4 (Double Data Rate 4) |
| Supply Voltage VDD | 1.2 V |
| Supply Voltage VDDQ | 1.2 V |
| 패키지 | 96-ball FBGA |
| 실장 유형 | Surface Mount |
| Banks | 16 banks (4 bank groups x 4) |
| Burst Length | BL8 |
| Refresh Mode | 1x / 2x / 4X per JEDEC DDR4 |
| Technology | CMOS |
| Application | Main memory (PC / server / embedded) |
H5ANAG6NCR-VKC 96-ball fbga 핀 구성 가이드
H5ANAG6NCR-VKC(96-ball fbga 패키지)의 핀 구성입니다. 이 디지털 IC에는 GPIO, 통신 인터페이스(UART, SPI, I2C), 전원 핀이 포함되어 있습니다. 대체 핀 기능과 구성 옵션은 제조사 데이터시트를 참조하십시오. 임베디드 시스템 설계와 PCB 레이아웃에 필수적입니다.
다음에 대한 상세 핀아웃 데이터 없음: H5ANAG6NCR-VKC.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
일반적인 애플리케이션
H5ANAG6NCR-VKC 적합 용도: 6 애플리케이션s: Server Main Memory, Workstation and Desktop UDIMM, Embedded Computing Boards, Networking and Telecommunication Equipment, Graphics and Accelerator Cards, Test and Measurement Instrumentation.
Server Main Memory
In server platforms, the H5ANAG6NCR-VKC populates RDIMM and LRDIMM modules where its 16Gb density enables high-capacity per-DIMM configurations, for example 64GB modules built from eight x8 dies per rank. The 2G x 8 organization maps efficiently onto JEDEC DDR4 rank architectures, and the 2666-class VKC bin matches common server controller frequencies. Bandwidth scales with channel population, and bank-group architecture sustains effective throughput under the random-access patterns typical of virtualized workloads. At 1.2V VDD, power per bit is reduced versus DDR3, an important factor in datacenter TCO where memory can account for a large share of server energy consumption.
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Workstation and Desktop UDIMM
High-end desktop and workstation motherboards use 16Gb DDR4 x8 components like the H5ANAG6NCR-VKC in unbuffered DIMMs, allowing 16GB single-rank modules and 32GB dual-rank modules without doubling chip count. The 2666 Mbps class bin supports mainstream Intel and AMD DDR4-2666 memory controller speeds, and JEDEC-standard timings ensure plug-and-play compatibility at default SPD profiles. Fully synchronous operation referenced to both clock edges sustains burst throughput for content-creation workloads. Thermal requirements are modest at UDIMM power levels, relying on module airflow rather than heatsinks in most desktop chassis designs.
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Embedded Computing Boards
Industrial embedded platforms such as COM Express, ATX industrial motherboards, and network-appliance boards use the H5ANAG6NCR-VKC soldered directly on-board (down on-board memory) to save height and improve vibration tolerance versus SODIMMs. The 96-ball FBGA package supports standard reflow assembly, and the 1.2V rails integrate cleanly with modern SoC power trees. Designers must follow JEDEC DDR4 fly-by routing with length matching and on-die termination enabled to achieve the 2666-class data rate on 4-to-8 layer PCBs. The 16Gb density allows 4GB to 8GB on-board footprints with only two to four components.
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Networking and Telecommunication Equipment
Routers, switches, and 5G baseband cards require large packet buffers and flow tables, making 16Gb DDR4 x8 components a standard choice. The H5ANAG6NCR-VKC's bank-group architecture provides the effective bandwidth needed to sustain line-rate packet processing when paired with network-processing ASICs or FPGA soft memory controllers. The VKC 2666-class bin matches common fabric clock domains, and 2x/4X refresh modes allow tuning of availability versus bandwidth. On-board soldered FBGA mounting withstands the thermal cycling and vibration profiles typical of telecom central-office and outdoor equipment enclosures.
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Graphics and Accelerator Cards
Entry-level GPU boards, AI inference accelerators, and video-capture cards use DDR4 x8 components as frame-buffer and working memory where GDDR bandwidth is not required. The H5ANAG6NCR-VKC provides 16Gb per die, so four x8 devices yield 8GB on a 32-bit bus. The BL8 burst and double-data-rate clocking deliver sustained streaming bandwidth for frame storage, while 1.2V operation keeps card power budgets compliant. Signal integrity at the 2666-class rate requires careful fly-by address routing and reference-plane continuity on the accelerator PCB per JEDEC DDR4 layout practice.
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Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and protocol analyzers capture massive data streams into DDR4 memory, where the H5ANAG6NCR-VKC's 16Gb density directly extends record length. Its x8 organization with DM data masking lets instruments gate irrelevant bytes during high-speed capture, and the 2666 Mbps class rate supports deep-memory acquisitions on multi-channel scopes. Controllers pair the DRAM with FPGA memory controllers (such as Arria 10 hard memory controllers), using JEDEC training for reliable link establishment. Consistent die availability matters here, making the multiple SK hynix speed-bin drop-ins on this page valuable for long product lifecycles.
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추천 제품 요약
엔지니어링 참조 데이터: H5ANAG6NCR-VKC — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | H5ANAG6NCJR-XNC | H5ANAG6NCR-UHC | H5ANAG6NCR-RDC | H5ANAG6NCJR-VKC |
|---|---|---|---|---|---|
| Brand | SK Hynix | SK Hynix | SK Hynix | SK Hynix | SK Hynix |
| Package | 96-ball FBGA | 96-ball FBGA - same | 96-ball FBGA - same | 96-ball FBGA - same | 96-ball FBGA - same |
| Density | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit |
| Organization | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 |
| Speed Grade | VKC (2666 Mbps class) | XNC (3200 Mbps class) | UHC (2400 Mbps class) | RDC (2133 Mbps class) | VKC (2666 Mbps class) |
| Interface | DDR4, 1.2 V | DDR4, 1.2 V | DDR4, 1.2 V | DDR4, 1.2 V | DDR4, 1.2 V |
| Bank Architecture | 16 banks / 4 bank groups | 16 banks / 4 bank groups | 16 banks / 4 bank groups | 16 banks / 4 bank groups | 16 banks / 4 bank groups |
| Typical Use | DDR4-2666 main memory | DDR4-3200 high-bandwidth | DDR4-2400 cost-optimized | DDR4-2133 embedded | DDR4-2666 main memory |
주요 차별점
- Faster bin than cost-optimized variants (vs H5ANAG6NCR-UHC)
- Lower power per bit than DDR3 (vs H5AN8G6NAFR-VKC)
- Density halves chip count vs 8Gb (vs H5AN8G8NCJR-VKC)
설계 노트
Route DDR4 address/command lines in fly-by topology with on-die termination enabled, and length-match DQ/DQS strobe pairs within the JEDEC DDR4 spec window for the 2666 Mbps class. Reference all layers to solid planes, avoid stubs on DQS lines, and series-terminate address/command at the controller. Simulate the eye diagram at the target data rate before fab; VDDQ droop below spec during simultaneous switching is a leading cause of training failure on 16Gb x8 designs.
Provide separate, well-decoupled 1.2V VDD and VDDQ rails. DRAM instantaneous current spikes with burst activity, so use bulk capacitance (e.g., 100uF per rank group) plus dense 0.1uF ceramics at each VDD/VDDQ ball pair. Estimated: IDD depends on the operating profile, so use SK hynix IDD tables for the VKC bin at your frequency rather than a generic figure, and size the PMIC with margin for refresh (1x to 4X modes change current draw).
Do not mix speed bins in the same rank without validating controller training at the slowest bin's timings. Verify the exact speed bin meaning of the VKC suffix against the die-revision datasheet (NCR vs JR revisions exist in this family), since suffix conventions can shift between die generations. Confirm the C temperature suffix range matches your ambient profile; operation above nominal temperature requires 2x refresh, which reduces available bandwidth.
규정 준수 정보
Compliance statements were not present in the retrieved web data for this MPN; confirm via SK hynix product page or distributor certificate.
