H5AN8G6NDJR-XNC vs K4A8G085WC-BIWE Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G6NDJR-XNC disebabkan oleh SK hynix dan K4A8G085WC-BIWE disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN8G6NDJR-XNC | K4A8G085WC-BIWE |
|---|---|---|
| Merek | SK hynix | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $55.68 | — |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Saiz Ingatan | 8 Gb | — |
| Memory Organization | 512M x16 | — |
| Kadar Data | 3200 Mbps | 3200 Mbps |
| Supply Voltage (VDD) | 1.2 V (max 1.26 V) | 1.2 V |
| Kemasan | FBGA-96 (13x7.5 mm) | 78-FBGA |
| Number of Terminals | 96 | — |
| Maximum Operating Temperature | 85 °C | — |
| Input/Output Type | COMMON | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | Yes |
| Boson Bebas | Yes | — |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Data Mask | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | — |
| Write Leveling | Yes | — |
| Asynchronous Reset | Yes | — |
| Density | — | 8 Gb |
| Organisasi | — | 1G x 8 |
| Supply Voltage (VDDQ) | — | 1.2 V |
| Gambaran Suhu Operasi | — | -40°C to +95°C |
| Jenis Pemasangan | — | Surface Mount |
| Antaramuka | — | POD-12 |
| Burst Length | — | 8 (BL8), 4 (BC4) |
| Latensi CAS | — | 22 (CL22) |
| Refresh | — | Auto-refresh, self-refresh |
| Status RoHS | — | Compliant |