H5AN8G6NDJR vs IS43QR16512B-062AABL Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G6NDJR disebabkan oleh SK hynix dan IS43QR16512B-062AABL disebabkan oleh ISSI, Integrated Silicon Solution Inc. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
ISSI, Integrated Silicon Solution Inc
IS43QR16512B-062AABL - 8Gb DDR4 SDRAM 512Mx16 | ISSI
IS43QR16512B-062AABL ✓ AktifPengandingan Spesifikasi
| Parametr | H5AN8G6NDJR | IS43QR16512B-062AABL |
|---|---|---|
| Merek | SK hynix | ISSI, Integrated Silicon Solution Inc |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organisasi | 512M x 16 | 512M x 16 |
| Kadar Data | 3200 Mbps (DDR4-3200) | 3200 MT/s |
| Tegangan Pemberi Arus | 1.2 V | 1.2 V |
| Kemasan | 96-ball FBGA (13mm x 7.5mm) | 96-TWBGA (7.5x13.5 mm) |
| Number of Terminals | 96 | — |
| Maximum Supply Voltage (Vsup) | 1.26 V | — |
| Maximum Operating Temperature | 85 °C | — |
| Burst Length | 8 (BL8), 4 (BC4) | — |
| Latensi CAS | 22 cycles (at 3200 Mbps) | 22-22-22 |
| Access Mode | Multi Bank Page Burst | — |
| JESD-30 Code | R-PBGA-B96 | — |
| RoHS | Compliant | Compliant |
| Ciri-ciri | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling | — |
| Saiz Ingatan | — | 8 Gbit |
| tRCD | — | 19 ns |
| Suhu Operasi | — | 0°C to +95°C (case) |
| Jenis Pemasangan | — | Surface Mount |
| Bilangan Pin | — | 96 |
| Antaramuka | — | POD (Pseudo Open Drain) |
| Clock Frequency | — | 1.6 GHz |
| Lebar Bus Data | — | 16 bit |