K4A8G165WB-BCWE vs IS43QR16512B-062AABL Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G165WB-BCWE disebabkan oleh Samsung Electronics dan IS43QR16512B-062AABL disebabkan oleh ISSI, Integrated Silicon Solution Inc. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4A8G165WB-BCWE - 8Gb DDR4 3200Mbps 96FBGA DRAM | Samsung
K4A8G165WB-BCWE ✓ AktifISSI, Integrated Silicon Solution Inc
IS43QR16512B-062AABL - 8Gb DDR4 SDRAM 512Mx16 | ISSI
IS43QR16512B-062AABL ✓ AktifPengandingan Spesifikasi
| Parametr | K4A8G165WB-BCWE | IS43QR16512B-062AABL |
|---|---|---|
| Merek | Samsung Electronics | ISSI, Integrated Silicon Solution Inc |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | In Stock | — |
| Harga Unit (USD) | $6.25 | — |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Saiz Ingatan | 8 Gb | 8 Gbit |
| Memory Organization | 512M x 16 | — |
| Kadar Data | 3200 Mbps/pin | 3200 MT/s |
| Tegangan Pemberi Arus | 1.2 V | 1.2 V |
| Access Time | 19 ns | — |
| Antaramuka | Parallel | POD (Pseudo Open Drain) |
| Kemasan | 96FBGA | 96-TWBGA (7.5x13.5 mm) |
| Suhu Operasi | 0C to +85C | 0°C to +95°C (case) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Memory Format | DRAM (volatile) | — |
| Technology | DDR4 SDRAM B-die | — |
| Prefetch | 8n | — |
| Refresh | Self-refresh supported | — |
| Termination | On-die termination (ODT) | — |
| Status RoHS | [DATA_NEEDED: RoHS compliance statement] | — |
| Aras MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Organisasi | — | 512M x 16 |
| Latensi CAS | — | 22-22-22 |
| tRCD | — | 19 ns |
| RoHS | — | Compliant |
| Bilangan Pin | — | 96 |
| Clock Frequency | — | 1.6 GHz |
| Lebar Bus Data | — | 16 bit |