K4A8G165WB-BCWE vs IS43QR16512B-062AABL Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A8G165WB-BCWE sa pamamagitan ng Samsung Electronics at IS43QR16512B-062AABL sa pamamagitan ng ISSI, Integrated Silicon Solution Inc. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A8G165WB-BCWE - 8Gb DDR4 3200Mbps 96FBGA DRAM | Samsung
K4A8G165WB-BCWE ✓ NakahandaISSI, Integrated Silicon Solution Inc
IS43QR16512B-062AABL - 8Gb DDR4 SDRAM 512Mx16 | ISSI
IS43QR16512B-062AABL ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4A8G165WB-BCWE | IS43QR16512B-062AABL |
|---|---|---|
| Brand | Samsung Electronics | ISSI, Integrated Silicon Solution Inc |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Katayuan ng Stock | In Stock | — |
| Presyo ng Yunit (USD) | $6.25 | — |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Laki ng Memory | 8 Gb | 8 Gbit |
| Memory Organization | 512M x 16 | — |
| Rate ng Data | 3200 Mbps/pin | 3200 MT/s |
| Volte ng Pagbibigay | 1.2 V | 1.2 V |
| Access Time | 19 ns | — |
| Interface | Parallel | POD (Pseudo Open Drain) |
| Packhaging | 96FBGA | 96-TWBGA (7.5x13.5 mm) |
| Temperature na Operasyon | 0C to +85C | 0°C to +95°C (case) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Memory Format | DRAM (volatile) | — |
| Technology | DDR4 SDRAM B-die | — |
| Prefetch | 8n | — |
| Refresh | Self-refresh supported | — |
| Termination | On-die termination (ODT) | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS compliance statement] | — |
| Level ng MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Organisasyon | — | 512M x 16 |
| Latensya ng CAS | — | 22-22-22 |
| tRCD | — | 19 ns |
| RoHS | — | Compliant |
| Bilang ng Pins | — | 96 |
| Clock Frequency | — | 1.6 GHz |
| Width ng Data Bus | — | 16 bit |