IPD068P03L3GATMA1 - 30V P-Ch OptiMOS MOSFET, 70A | Infineon
MPN: IPD068P03L3GATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.12 | $1.12 |
| 10 | $0.98 | $9.80 |
| 100 | $0.81 | $81.00 |
| 500 | $0.69 | $345.00 |
| 1,000 | $0.58 | $580.00 |
| 2,500 | $0.51 | $1,275.00 |
Drop-in alternatives for IPD068P03L3GATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPD042P03L3GATMA1
✅ Drop-In✓ In Stock
$0.28 / Unit
View Datasheet →IPD068P03L3G
✅ Drop-In📋 Reference alternative (not in catalog)
IPD068P03L3GATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS P-Channel Power MOSFET |
| Polarity / Channel Type | P-Channel |
| Drain-Source Voltage (V_DS) | -30 V |
| Continuous Drain Current (I_D) at T_C | -70 A |
| Power Dissipation (P_D) at T_C | 100 W |
| R_DS(on) max at V_GS=-10V | 0.005 ohm (typical) |
| Gate-Source Threshold Voltage (V_GS(th)) | -1.0 V to -2.2 V |
| Operating Temperature Range | -55C to +175C (junction) |
| Package | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount |
| Channel Mode | Enhancement |
| RoHS Status | Compliant |
| MSL Level | 1 (unlimited floor life at <30C/85% RH) |
| Technology | Trench MOSFET (OptiMOS) |
IPD068P03L3GATMA1 Pin Configuration
| Pin 1 | Gate — MOSFET gate control input |
| Pin 2 | Drain — Drain terminal (electrically connected to the metal tab on the back of the package) |
| Pin 3 | Source — Source terminal (typically tied to the higher-potential rail in P-channel high-side switching) |
Safe Operating Area (SOA) - PG-TO252-3
Typical Applications
IPD068P03L3GATMA1 is suitable for 7 applications: 12 V Automotive High-Side Load Switch, Reverse-Battery / Reverse-Polarity Protection, USB Type-C VBUS Load Switch, OR-ing Diode / Redundant Power Source Selector, Synchronous Rectifier in Low-Voltage Buck Converter, Battery Pack Discharge Protection (12 V Lead-Acid / Li-ion), Industrial 24 V Sensor/Actuator Power Switch.
12 V Automotive High-Side Load Switch
The IPD068P03L3GATMA1 sits between the 12 V battery rail and the downstream load, controlled by an open-drain GPIO that pulls the gate to ground to turn the FET on. With V_DS = -30 V the device handles 12 V rail transients comfortably, and the typical R_DS(on) of 0.005 ohm at -10 V V_GS keeps conduction loss under 50 mW at a 3 A continuous load. P-channel topology eliminates the need for a charge pump or bootstrap, allowing direct drive from a microcontroller or low-side gate driver. The DPAK package exposes the drain tab for heatsinking, supporting sustained currents up to several amps on 1 oz copper.
Recommended
Reverse-Battery / Reverse-Polarity Protection
A common 12 V reverse-polarity protection circuit places the P-channel MOSFET IPD068P03L3GATMA1 between the input connector and the downstream load. Under normal polarity the body diode conducts initially and the gate is pulled to ground by a Zener-resistor network, fully enhancing the FET and bypassing the diode to minimize the forward drop. During a reverse-polarity event the FET remains off and blocks current flow, protecting downstream electronics. The -30 V V_DS rating and 100 W power dissipation give ample margin for the brief inrush of decoupling capacitors. The low R_DS(on) of 0.005 ohm keeps forward voltage drop below 25 mV at 5 A, far superior to a Schottky diode solution.
Recommended
USB Type-C VBUS Load Switch
The IPD068P03L3GATMA1 serves as a high-side load switch on the 5 V VBUS rail of a USB Type-C downstream-facing port (DFP). When the USB-PD controller negotiates a higher voltage (9 V, 15 V, 20 V), the same FET remains in-circuit, blocking the higher VBUS from the 5 V-only legacy circuitry downstream. With R_DS(on) of 0.005 ohm at V_GS = -10 V the conduction loss at 3 A VBUS current is just 45 mW. The P-channel gate can be driven directly from an open-drain enable pin of a USB Type-C port controller such as the FUSB302. The DPAK footprint allows reuse across multiple USB port designs.
Recommended
OR-ing Diode / Redundant Power Source Selector
In redundant 12 V supply systems (battery + adapter, two adapters, etc.) the IPD068P03L3GATMA1 operates as an OR-ing MOSFET, replacing a Schottky diode to reduce forward drop and heat. Two P-channel FETs back-to-back (sources tied together) ensure that the higher-voltage supply carries the load while the lower-voltage supply sees a reverse-biased FET and is blocked. Compared to a 0.4 V Schottky at 5 A, the 0.005 ohm R_DS(on) of the IPD068P03L3GATMA1 cuts the forward drop to 25 mV - a 94% reduction that improves overall system efficiency by several percent in telecom and server applications.
Recommended
Synchronous Rectifier in Low-Voltage Buck Converter
In a low-voltage buck converter operating from a 12 V input to a 3.3 V or 5 V output, the IPD068P03L3GATMA1 can serve as the synchronous rectifier (low-side switch), with the P-channel source tied to the switch node. The very low R_DS(on) of 0.005 ohm at V_GS = -10 V minimizes synchronous-FET conduction loss during the freewheeling phase. The body diode provides a default conduction path during dead-time, eliminating the need for an external Schottky. For 5 A-10 A output designs the DPAK thermal performance is adequate with proper copper-pour design.
Recommended
Battery Pack Discharge Protection (12 V Lead-Acid / Li-ion)
Inside a 12 V battery management system (BMS) the IPD068P03L3GATMA1 functions as the high-side discharge MOSFET, controlled by a battery monitor IC such as the bq40z50. The low R_DS(on) of 0.005 ohm at V_GS = -10 V keeps discharge-path conduction loss below 50 mW even at 10 A continuous discharge, preserving battery runtime. The -30 V V_DS rating handles the inductive flyback of downstream DC motors or solenoids. The DPAK package allows PCB-level integration without a discrete heatsink for typical 5 A continuous discharge duty cycles.
Recommended
Industrial 24 V Sensor/Actuator Power Switch
In 24 V industrial automation systems the IPD068P03L3GATMA1 acts as a high-side switch for solenoid valves, relays, and sensor clusters. With V_DS = -30 V the device handles the 24 V nominal rail with margin for transients, and the typical R_DS(on) of 0.005 ohm supports multi-amp continuous loads without significant heat rise. The P-channel topology permits direct control from a 3.3 V or 5 V PLC output without a charge pump, simplifying the BOM. The DPAK package's drain tab provides a low-impedance thermal path when soldered to a copper pour, supporting the long on-times typical of industrial actuator duty cycles.
Recommended
Recommended Products Summary
Engineering reference data for IPD068P03L3GATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPD042P03L3GATMA1 | IPD068P03L3G | BSZ180P03NS3EGATMA1 | BSC123N08NS3GATMA1 |
|---|---|---|---|---|---|
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TSDSON-8 - different | PG-TDSON-8 - different |
| Brand | Infineon Technologies | Infineon Technologies - same | Infineon Technologies - same | Infineon Technologies - same | Infineon Technologies - same |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | N-Channel |
| V_DS (V) | -30 | -30 | -30 | -30 | 80 (N-ch) |
| Continuous Drain Current at Tc (A) | -70 | -70 (per family spec) | -70 | [DATA_NEEDED] | [DATA_NEEDED] |
| R_DS(on) typical at V_GS=10V (ohm) | 0.005 | 0.0042 | 0.005 | [DATA_NEEDED] | [DATA_NEEDED] |
| Power Dissipation at Tc (W) | 100 | 100 (same family) | 100 | [DATA_NEEDED] | [DATA_NEEDED] |
| Technology | OptiMOS trench P-Channel | OptiMOS trench P-Channel | OptiMOS trench P-Channel | OptiMOS P-Channel | OptiMOS N-Channel |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant |
Key Differentiators
- Lower R_DS(on) than predecessor IPD068P03L3 (vs IPD068P03L3G)
- OptiMOS P-channel process gives best-in-class FOM (vs BSC123N08NS3GATMA1)
- Automotive-qualified ordering code ATMA1 (vs IPD068P03L3G)
Design Notes
Estimated: at P_D = 7 W continuous dissipation with the IPD068P03L3GATMA1 in a DPAK on 1 oz copper (theta_JA approximately 50 C/W), the junction temperature rise above ambient is about 350 C - far exceeding the 175 C maximum. For any sustained dissipation above ~2 W, attach the DPAK drain tab to a copper pour of at least 1 square inch (645 mm^2) on both top and bottom layers with multiple thermal vias. Without this the device will thermally limit within seconds at high current.
The DPAK drain tab (Pin 2) is also the primary thermal path. Use a copper land pattern of at least 50 mm^2 under the tab, with thermal vias (typically 8-12 0.3 mm vias) connecting to an inner or bottom copper plane. Gate-trace length should be minimized to limit ringing - keep it under 10 mm and add a 100 ohm gate resistor if long traces are unavoidable. Keep high-current drain paths away from sensitive analog circuits.
Do not parallel multiple IPD068P03L3GATMA1 devices without individual gate-source resistors (typically 10-100 ohm). Without gate-source resistors the paralleled FETs can oscillate due to gate-drain Miller capacitance, leading to cross-conduction and catastrophic failure. Always include a pull-down resistor on the gate to ensure the FET stays off when the controller is in reset. For reverse-battery applications, verify the gate-voltage clamp Zener can sink the gate-charge current without exceeding its power rating during turn-on.
Use a minimum of 2 oz copper on the drain pad for any application exceeding 5 A continuous. The DPAK footprint benefits from a slightly oversized copper pad (IPC-7351 nominal plus 0.5 mm margin) to improve thermal coupling to inner copper planes. Solder paste stencil aperture should be 1:1 with the pad to ensure sufficient solder volume for the drain tab - insufficient solder here is the leading cause of DPAK thermal failure in the field.
Compliance Information
Per Infineon product page: RoHS compliant, lead-free (Pb-free) reflow-solderable, REACH compliant, CMRT compliant. AEC-Q100 qualification status was not explicitly stated in the verified web data and is marked 'unknown'; the ATMA1 ordering suffix is consistent with Infineon's automotive-grade tape-and-reel format but is not by itself proof of AEC-Q100 qualification.
