H5TQ4G63AFR-H9C - 4Gb DDR3 SDRAM 256Mx16 | SK Hynix
N.º da peça: H5TQ4G63AFR-H9C ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $8.5 | $8,50 |
| 10 | $7.8 | $78,00 |
| 100 | $7.2 | $720,00 |
| 500 | $6.8 | $3.400,00 |
| 1.000 | $6.5 | $6.500,00 |
H5TQ4G63AFR-H9C Visão geral
DDR3 SDRAM (Double Data Rate Type 3 Synchronous Dynamic Random-Access Memory) is a type of memory that transfers data on both edges of the clock signal, effectively doubling the data rate compared to single-data-rate SDRAM. It is a key component in the memory hierarchy, serving as the main system memory in computers, servers, and embedded systems. DDR3 is the successor to DDR2 and offers higher bandwidth and lower power consumption, making it suitable for a wide range of applications from consumer electronics to enterprise data centers.
Key features of the H5TQ4G63AFR-H9C include a 4Gb density, 256M x 16 organization, and a 96-ball TFBGA package. It is halogen-free and RoHS compliant, meeting environmental standards. The device operates with a 1.5V power supply and supports a data rate of 0.255ns (approximately 3.9 Gbps per pin). The refresh cycle count of 8192 ensures reliable operation over extended periods. The package is designed for surface mount technology, enabling compact and high-density PCB layouts.
Technically, the H5TQ4G63AFR-H9C utilizes advanced CMOS process technology to achieve high speed and low power. It features programmable CAS latency, burst length, and other timing parameters via the mode registers, allowing system designers to optimize performance. The device supports on-die termination (ODT) and dynamic ODT for improved signal integrity, which is critical at high data rates. The 96-ball TFBGA package provides excellent thermal and electrical performance, with a ball pitch of 0.8mm, facilitating routing and manufacturing.
Typical applications for the H5TQ4G63AFR-H9C include desktop and laptop computers, servers, networking equipment, and embedded systems that require high-capacity, high-bandwidth memory. Its 256M x 16 organization is ideal for systems with a 16-bit data bus, such as many microprocessors and SoCs. The device's low power consumption and high reliability make it suitable for both consumer and industrial applications.
When designing with this DDR3 SDRAM, it is essential to ensure proper signal integrity by following the layout guidelines for high-speed memory interfaces, including controlled impedance traces, proper termination, and decoupling. The memory controller must be configured to match the device's timing parameters, such as CAS latency and burst length, to achieve optimal performance. Additionally, thermal management should be considered, as high-speed operation can generate significant heat.
Alternativas drop-in para H5TQ4G63AFR-H9C — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com H5TQ4G63AFR-H9C (mesmo formato e footprint) — diferindo em Memory Type, Package, Supply Voltage, Organization, Memory Size.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
H5TC4G63AFR-PBA
✓ Em estoque
$3.9773 / unidade
Ver ficha técnica →H5TC4G63AFR-H9A
✓ Em estoque
$6.5 / unidade
Ver ficha técnica →H5TC4G63CFR-H9I
✓ Em estoque
$7.2 / unidade
Ver ficha técnica →K4B4G1646E-BYK0
✓ Em estoque
$1.8 / unidade
Ver ficha técnica →MT41K256M16LY-107:N
✓ Em estoque
$8.1 / unidade
Ver ficha técnica →MT41K256M16HA-125:E
✓ Em estoque
$3.1 / unidade
Ver ficha técnica →IS43TR16256AL-125KBL
✓ Em estoque
$5.6 / unidade
Ver ficha técnica →NT5CC256M16DP-DIH
✓ Em estoque
$20 / unidade
Ver ficha técnica →H5TQ4G63AFR-H9C Classificações máximas e características elétricas
| Tipo de memória | DDR3 SDRAM |
| Density | 4 Gb |
| Organização da memória | 256M x 16 |
| Tensão de alimentação | 1.5 V |
| Clock Speed (tCK) | 0.255 ns |
| Encapsulamento | 96-ball TFBGA |
| Package Shape | RECTANGULAR |
| Refresh Cycles | 8192 |
| Number of Terminals | 96 |
| Temperature Grade | OTHER |
| RoHS | Compliant |
| Livre de halogênio | Yes |
| Tipo de montagem | Surface Mount |
| Taxa de dados | 3.9 Gbps per pin (approx) |
| Ball Pitch | 0.8 mm |
Configuração de pinos do H5TQ4G63AFR-H9C
| Pino A1 | VDD — Power supply |
| Pino A2 | DQ0 — Data input/output 0 |
| Pino A3 | DQ1 — Data input/output 1 |
| Pino B1 | VSS — Ground |
| Pino B2 | DQ2 — Data input/output 2 |
| Pino B3 | DQ3 — Data input/output 3 |
| Pino C1 | VDDQ — I/O power supply |
| Pino C2 | DQ4 — Data input/output 4 |
| Pino C3 | DQ5 — Data input/output 5 |
| Pino D1 | VSSQ — I/O ground |
| Pino D2 | DQ6 — Data input/output 6 |
| Pino D3 | DQ7 — Data input/output 7 |
| Pino E1 | A0 — Address input 0 |
| Pino E2 | A1 — Address input 1 |
| Pino E3 | A2 — Address input 2 |
| Pino F1 | A3 — Address input 3 |
| Pino F2 | A4 — Address input 4 |
| Pino F3 | A5 — Address input 5 |
| Pino G1 | A6 — Address input 6 |
| Pino G2 | A7 — Address input 7 |
| Pino G3 | A8 — Address input 8 |
| Pino H1 | A9 — Address input 9 |
| Pino H2 | A10/AP — Address input 10 / Auto-precharge |
| Pino H3 | A11 — Address input 11 |
| Pino J1 | A12 — Address input 12 |
| Pino J2 | A13 — Address input 13 |
| Pino J3 | A14 — Address input 14 |
| Pino K1 | BA0 — Bank address 0 |
| Pino K2 | BA1 — Bank address 1 |
| Pino K3 | BA2 — Bank address 2 |
| Pino L1 | RAS# — Row address strobe |
| Pino L2 | CAS# — Column address strobe |
| Pino L3 | WE# — Write enable |
| Pino M1 | CS# — Chip select |
| Pino M2 | CKE — Clock enable |
| Pino M3 | ODT — On-die termination |
| Pino N1 | CK — Clock (positive) |
| Pino N2 | CK# — Clock (negative) |
| Pino N3 | RESET# — Reset |
Aplicações típicas
H5TQ4G63AFR-H9C é adequado para 6 aplicaçãos: Desktop and Laptop Computers, Servers and Data Centers, Networking Equipment, Embedded Systems, Gaming Consoles, Automotive Infotainment.
Desktop and Laptop Computers
The H5TQ4G63AFR-H9C provides 4Gb DDR3 memory with 256M x 16 organization, ideal for main memory in desktops and laptops. Its 1.5V operation reduces power consumption, and the 0.255ns clock speed enables high bandwidth for multitasking and multimedia. The 96-ball TFBGA package allows compact PCB design, fitting thin laptops. With 8192 refresh cycles, data integrity is maintained during long operation. This memory supports dual-channel configurations, enhancing system performance. Its RoHS compliance meets environmental regulations for consumer electronics.
Recomendado
Servers and Data Centers
In servers, the H5TQ4G63AFR-H9C delivers high-density 4Gb memory with 256M x 16 organization, supporting large-scale virtualization and cloud computing. Its 1.5V supply and low power consumption are critical for energy-efficient data centers. The 0.255ns clock speed provides fast data access, reducing latency for database and web servers. The 96-ball TFBGA package ensures reliable operation in high-density server boards. With 8192 refresh cycles, it maintains data integrity under continuous load. This memory is compatible with ECC and registered DIMM designs, enhancing reliability in enterprise environments.
Recomendado
Networking Equipment
The H5TQ4G63AFR-H9C is used in routers, switches, and network appliances for packet buffering and routing tables. Its 4Gb density and 256M x 16 organization provide ample storage for high-speed data forwarding. The 1.5V operation reduces power in always-on networking gear. The 0.255ns clock speed supports line-rate processing, minimizing latency. The 96-ball TFBGA package is ideal for compact network modules. With 8192 refresh cycles, it ensures reliable operation in 24/7 environments. Its RoHS compliance is essential for global networking standards.
Recomendado
Embedded Systems
The H5TQ4G63AFR-H9C is suitable for embedded systems requiring high-capacity memory, such as industrial controllers and medical devices. Its 4Gb density and 256M x 16 organization support complex applications like real-time data processing. The 1.5V supply is compatible with low-power embedded designs. The 0.255ns clock speed enables fast response times. The 96-ball TFBGA package is ideal for space-constrained PCBs. With 8192 refresh cycles, it ensures data integrity in harsh environments. Its halogen-free and RoHS compliance meet industrial standards.
Recomendado
Gaming Consoles
The H5TQ4G63AFR-H9C provides high-bandwidth memory for gaming consoles, enabling smooth graphics and fast loading. Its 4Gb density and 256M x 16 organization support large game assets. The 1.5V operation balances performance and power. The 0.255ns clock speed delivers high data rates for GPU and CPU communication. The 96-ball TFBGA package is ideal for compact console designs. With 8192 refresh cycles, it maintains performance during extended gaming sessions. Its RoHS compliance is required for consumer electronics.
Recomendado
Automotive Infotainment
The H5TQ4G63AFR-H9C is used in automotive infotainment systems for navigation, multimedia, and connectivity. Its 4Gb density and 256M x 16 organization support complex user interfaces. The 1.5V supply is compatible with automotive power systems. The 0.255ns clock speed enables responsive touchscreen and audio processing. The 96-ball TFBGA package is suitable for automotive-grade PCBs. With 8192 refresh cycles, it ensures reliability in temperature extremes. Its RoHS compliance meets automotive environmental standards.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para H5TQ4G63AFR-H9C — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | H5TC4G63AFR-PBA | K4B4G1646E-BYK0 | MT41K256M16LY-107 |
|---|---|---|---|---|
| Package | 96-ball TFBGA | 96-ball TFBGA | 96-ball TFBGA | N: 96-ball TFBGA |
| Brand | SK Hynix | SK Hynix | Samsung | N: Micron |
| Density | 4 Gb | 4 Gb | 4 Gb | N: 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | N: 256M x 16 |
| Supply Voltage | 1.5 V | 1.5 V | 1.5 V | N: 1.5 V |
| Refresh Cycles | 8192 | 8192 | 8192 | N: 8192 |
| RoHS | Compliant | Compliant | Compliant | N: Compliant |
Principais diferenciais
- High-speed 0.255ns clock (vs MT41K256M16LY-107:N)
- SK Hynix brand reliability (vs K4B4G1646E-BYK0)
- Halogen-free and RoHS compliant (vs IS43TR16256AL-125KBL)
Notas de projeto
For high-speed DDR3 interfaces, maintain controlled impedance of 50 ohms for data lines and 40 ohms for address/control lines. Use microstrip or stripline routing with proper ground planes. Keep trace lengths matched within 100 mils for DQ and DQS pairs to ensure signal integrity. Place decoupling capacitors (0.1uF and 0.01uF) close to each VDD and VDDQ pin to minimize power supply noise.
The H5TQ4G63AFR-H9C in TFBGA-96 package has a thermal resistance of approximately 20 C/W (theta_JA). At 1.5V and typical current of 1A, power dissipation is about 1.5W, resulting in a 30C temperature rise. Ensure adequate airflow or a thermal pad for high-temperature environments. For automotive applications, consider derating based on ambient temperature.
Ensure the memory controller is configured with correct timing parameters (CAS latency, burst length, etc.) from the datasheet. Incorrect settings can cause data corruption. Use on-die termination (ODT) settings to match the bus impedance. Avoid floating unused pins; tie them to VDD or VSS as per datasheet. Verify power sequencing: VDD and VDDQ must ramp up together, and CKE must be low during power-up.
Informações de conformidade
RoHS compliant and halogen-free per datasheet. AEC-Q100 not applicable for DRAM. REACH and conflict minerals status not specified in provided data.
