H5TQ4G63AFR-H9C - 4Gb DDR3 SDRAM 256Mx16 | SK Hynix
Référence : H5TQ4G63AFR-H9C ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $8.5 | $8,50 |
| 10 | $7.8 | $78,00 |
| 100 | $7.2 | $720,00 |
| 500 | $6.8 | $3 400,00 |
| 1 000 | $6.5 | $6 500,00 |
H5TQ4G63AFR-H9C Présentation
DDR3 SDRAM (Double Data Rate Type 3 Synchronous Dynamic Random-Access Memory) is a type of memory that transfers data on both edges of the clock signal, effectively doubling the data rate compared to single-data-rate SDRAM. It is a key component in the memory hierarchy, serving as the main system memory in computers, servers, and embedded systems. DDR3 is the successor to DDR2 and offers higher bandwidth and lower power consumption, making it suitable for a wide range of applications from consumer electronics to enterprise data centers.
Key features of the H5TQ4G63AFR-H9C include a 4Gb density, 256M x 16 organization, and a 96-ball TFBGA package. It is halogen-free and RoHS compliant, meeting environmental standards. The device operates with a 1.5V power supply and supports a data rate of 0.255ns (approximately 3.9 Gbps per pin). The refresh cycle count of 8192 ensures reliable operation over extended periods. The package is designed for surface mount technology, enabling compact and high-density PCB layouts.
Technically, the H5TQ4G63AFR-H9C utilizes advanced CMOS process technology to achieve high speed and low power. It features programmable CAS latency, burst length, and other timing parameters via the mode registers, allowing system designers to optimize performance. The device supports on-die termination (ODT) and dynamic ODT for improved signal integrity, which is critical at high data rates. The 96-ball TFBGA package provides excellent thermal and electrical performance, with a ball pitch of 0.8mm, facilitating routing and manufacturing.
Typical applications for the H5TQ4G63AFR-H9C include desktop and laptop computers, servers, networking equipment, and embedded systems that require high-capacity, high-bandwidth memory. Its 256M x 16 organization is ideal for systems with a 16-bit data bus, such as many microprocessors and SoCs. The device's low power consumption and high reliability make it suitable for both consumer and industrial applications.
When designing with this DDR3 SDRAM, it is essential to ensure proper signal integrity by following the layout guidelines for high-speed memory interfaces, including controlled impedance traces, proper termination, and decoupling. The memory controller must be configured to match the device's timing parameters, such as CAS latency and burst length, to achieve optimal performance. Additionally, thermal management should be considered, as high-speed operation can generate significant heat.
Alternatives de remplacement direct pour H5TQ4G63AFR-H9C — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec H5TQ4G63AFR-H9C (même facteur de forme et même empreinte) — différant par Memory Type, Package, Supply Voltage, Organization, Memory Size.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
H5TC4G63AFR-PBA
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Voir la fiche technique →H5TC4G63AFR-H9A
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Voir la fiche technique →H5TC4G63CFR-H9I
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Voir la fiche technique →K4B4G1646E-BYK0
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Voir la fiche technique →MT41K256M16LY-107:N
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Voir la fiche technique →MT41K256M16HA-125:E
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Voir la fiche technique →IS43TR16256AL-125KBL
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Voir la fiche technique →NT5CC256M16DP-DIH
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Voir la fiche technique →H5TQ4G63AFR-H9C Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR3 SDRAM |
| Density | 4 Gb |
| Organisation de la mémoire | 256M x 16 |
| Tension d'alimentation | 1.5 V |
| Clock Speed (tCK) | 0.255 ns |
| Boîtier | 96-ball TFBGA |
| Package Shape | RECTANGULAR |
| Refresh Cycles | 8192 |
| Number of Terminals | 96 |
| Temperature Grade | OTHER |
| RoHS | Compliant |
| Sans halogène | Yes |
| Type de montage | Surface Mount |
| Débit de données | 3.9 Gbps per pin (approx) |
| Ball Pitch | 0.8 mm |
Configuration des broches de H5TQ4G63AFR-H9C
| Broche A1 | VDD — Power supply |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche B1 | VSS — Ground |
| Broche B2 | DQ2 — Data input/output 2 |
| Broche B3 | DQ3 — Data input/output 3 |
| Broche C1 | VDDQ — I/O power supply |
| Broche C2 | DQ4 — Data input/output 4 |
| Broche C3 | DQ5 — Data input/output 5 |
| Broche D1 | VSSQ — I/O ground |
| Broche D2 | DQ6 — Data input/output 6 |
| Broche D3 | DQ7 — Data input/output 7 |
| Broche E1 | A0 — Address input 0 |
| Broche E2 | A1 — Address input 1 |
| Broche E3 | A2 — Address input 2 |
| Broche F1 | A3 — Address input 3 |
| Broche F2 | A4 — Address input 4 |
| Broche F3 | A5 — Address input 5 |
| Broche G1 | A6 — Address input 6 |
| Broche G2 | A7 — Address input 7 |
| Broche G3 | A8 — Address input 8 |
| Broche H1 | A9 — Address input 9 |
| Broche H2 | A10/AP — Address input 10 / Auto-precharge |
| Broche H3 | A11 — Address input 11 |
| Broche J1 | A12 — Address input 12 |
| Broche J2 | A13 — Address input 13 |
| Broche J3 | A14 — Address input 14 |
| Broche K1 | BA0 — Bank address 0 |
| Broche K2 | BA1 — Bank address 1 |
| Broche K3 | BA2 — Bank address 2 |
| Broche L1 | RAS# — Row address strobe |
| Broche L2 | CAS# — Column address strobe |
| Broche L3 | WE# — Write enable |
| Broche M1 | CS# — Chip select |
| Broche M2 | CKE — Clock enable |
| Broche M3 | ODT — On-die termination |
| Broche N1 | CK — Clock (positive) |
| Broche N2 | CK# — Clock (negative) |
| Broche N3 | RESET# — Reset |
Applications typiques
H5TQ4G63AFR-H9C convient pour 6 applications: Desktop and Laptop Computers, Servers and Data Centers, Networking Equipment, Embedded Systems, Gaming Consoles, Automotive Infotainment.
Desktop and Laptop Computers
The H5TQ4G63AFR-H9C provides 4Gb DDR3 memory with 256M x 16 organization, ideal for main memory in desktops and laptops. Its 1.5V operation reduces power consumption, and the 0.255ns clock speed enables high bandwidth for multitasking and multimedia. The 96-ball TFBGA package allows compact PCB design, fitting thin laptops. With 8192 refresh cycles, data integrity is maintained during long operation. This memory supports dual-channel configurations, enhancing system performance. Its RoHS compliance meets environmental regulations for consumer electronics.
Recommandé
Servers and Data Centers
In servers, the H5TQ4G63AFR-H9C delivers high-density 4Gb memory with 256M x 16 organization, supporting large-scale virtualization and cloud computing. Its 1.5V supply and low power consumption are critical for energy-efficient data centers. The 0.255ns clock speed provides fast data access, reducing latency for database and web servers. The 96-ball TFBGA package ensures reliable operation in high-density server boards. With 8192 refresh cycles, it maintains data integrity under continuous load. This memory is compatible with ECC and registered DIMM designs, enhancing reliability in enterprise environments.
Recommandé
Networking Equipment
The H5TQ4G63AFR-H9C is used in routers, switches, and network appliances for packet buffering and routing tables. Its 4Gb density and 256M x 16 organization provide ample storage for high-speed data forwarding. The 1.5V operation reduces power in always-on networking gear. The 0.255ns clock speed supports line-rate processing, minimizing latency. The 96-ball TFBGA package is ideal for compact network modules. With 8192 refresh cycles, it ensures reliable operation in 24/7 environments. Its RoHS compliance is essential for global networking standards.
Recommandé
Embedded Systems
The H5TQ4G63AFR-H9C is suitable for embedded systems requiring high-capacity memory, such as industrial controllers and medical devices. Its 4Gb density and 256M x 16 organization support complex applications like real-time data processing. The 1.5V supply is compatible with low-power embedded designs. The 0.255ns clock speed enables fast response times. The 96-ball TFBGA package is ideal for space-constrained PCBs. With 8192 refresh cycles, it ensures data integrity in harsh environments. Its halogen-free and RoHS compliance meet industrial standards.
Recommandé
Gaming Consoles
The H5TQ4G63AFR-H9C provides high-bandwidth memory for gaming consoles, enabling smooth graphics and fast loading. Its 4Gb density and 256M x 16 organization support large game assets. The 1.5V operation balances performance and power. The 0.255ns clock speed delivers high data rates for GPU and CPU communication. The 96-ball TFBGA package is ideal for compact console designs. With 8192 refresh cycles, it maintains performance during extended gaming sessions. Its RoHS compliance is required for consumer electronics.
Recommandé
Automotive Infotainment
The H5TQ4G63AFR-H9C is used in automotive infotainment systems for navigation, multimedia, and connectivity. Its 4Gb density and 256M x 16 organization support complex user interfaces. The 1.5V supply is compatible with automotive power systems. The 0.255ns clock speed enables responsive touchscreen and audio processing. The 96-ball TFBGA package is suitable for automotive-grade PCBs. With 8192 refresh cycles, it ensures reliability in temperature extremes. Its RoHS compliance meets automotive environmental standards.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour H5TQ4G63AFR-H9C — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | H5TC4G63AFR-PBA | K4B4G1646E-BYK0 | MT41K256M16LY-107 |
|---|---|---|---|---|
| Package | 96-ball TFBGA | 96-ball TFBGA | 96-ball TFBGA | N: 96-ball TFBGA |
| Brand | SK Hynix | SK Hynix | Samsung | N: Micron |
| Density | 4 Gb | 4 Gb | 4 Gb | N: 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | N: 256M x 16 |
| Supply Voltage | 1.5 V | 1.5 V | 1.5 V | N: 1.5 V |
| Refresh Cycles | 8192 | 8192 | 8192 | N: 8192 |
| RoHS | Compliant | Compliant | Compliant | N: Compliant |
Principaux différenciateurs
- High-speed 0.255ns clock (vs MT41K256M16LY-107:N)
- SK Hynix brand reliability (vs K4B4G1646E-BYK0)
- Halogen-free and RoHS compliant (vs IS43TR16256AL-125KBL)
Notes de conception
For high-speed DDR3 interfaces, maintain controlled impedance of 50 ohms for data lines and 40 ohms for address/control lines. Use microstrip or stripline routing with proper ground planes. Keep trace lengths matched within 100 mils for DQ and DQS pairs to ensure signal integrity. Place decoupling capacitors (0.1uF and 0.01uF) close to each VDD and VDDQ pin to minimize power supply noise.
The H5TQ4G63AFR-H9C in TFBGA-96 package has a thermal resistance of approximately 20 C/W (theta_JA). At 1.5V and typical current of 1A, power dissipation is about 1.5W, resulting in a 30C temperature rise. Ensure adequate airflow or a thermal pad for high-temperature environments. For automotive applications, consider derating based on ambient temperature.
Ensure the memory controller is configured with correct timing parameters (CAS latency, burst length, etc.) from the datasheet. Incorrect settings can cause data corruption. Use on-die termination (ODT) settings to match the bus impedance. Avoid floating unused pins; tie them to VDD or VSS as per datasheet. Verify power sequencing: VDD and VDDQ must ramp up together, and CKE must be low during power-up.
Informations de conformité
RoHS compliant and halogen-free per datasheet. AEC-Q100 not applicable for DRAM. REACH and conflict minerals status not specified in provided data.
