NT6AN8T6WBJ1B1 vs NT6AN8T0SA Perbandingan
Perbandingan bersamaan detil NT6AN8T6WBJ1B1 dari Nanya Technology dan NT6AN8T0SA dari Nanya Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | NT6AN8T6WBJ1B1 | NT6AN8T0SA |
|---|---|---|
| Merek | Nanya Technology | Nanya Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | LPDDR2 SDRAM |
| Ukuran Memori | 8 Gb (512M x 16) | — |
| Laju Data | 3200 MT/s | 1066 Mbps (533 MHz) |
| Tegangan Pemuat | 1.2 V | 1.2V |
| I/O Voltage (VDDQ) | 1.2 V | — |
| Latensi CAS | 22 cycles | — |
| Burst Length | 8 (BL8), 4 (BC4) | 4 or 8 |
| Paket | 96-ball FBGA | FBGA |
| Suhu Kerja | 0C to +95C (TC) | — |
| Refresh | Auto-refresh, self-refresh | — |
| On-Die Termination | Yes (ODT) | Yes |
| Bank Groups | 4 groups of 4 banks | — |
| Row Address | 16 bits | — |
| Column Address | 10 bits | — |
| Status RoHS | Compliant | Compliant |
| Density | — | 2Gb |
| Organisasi | — | 64M x 32 |
| I/O Voltage | — | 1.2V |
| Rentang Suhu Kerja | — | -30°C to +85°C |
| Tipe Mounting | — | Surface Mount |
| Lead-Free | — | Yes |
| Refresh Period | — | 64ms at 85°C |
| DLL | — | Yes |