H5AN4G6NBJR-PBC - 4Gb DDR4 SDRAM 256Mx16 FBGA-96 | SK hynix
Référence : H5AN4G6NBJR-PBC ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $8.1 | $8,10 |
| 10 | $7.8 | $78,00 |
| 100 | $7.4 | $740,00 |
| 500 | $7 | $3 500,00 |
| 1 000 | $6.6 | $6 600,00 |
H5AN4G6NBJR-PBC Présentation
DDR4 SDRAM (Double Data Rate IV Synchronous Dynamic Random Access Memory) is the fourth generation of the DDR memory family. It transfers data on both rising and falling edges of the clock, and introduces bank groups, a lower 1.2V operating voltage, and dynamic on-chip termination compared to DDR3, delivering higher bandwidth per watt. Within the memory hierarchy, this component is the main-system-memory class of DRAM: DRAM -> DDR4 SDRAM -> volatile memory IC -> semiconductor memory.
Key features of the H5AN4G6NBJR family, per the SK hynix datasheet, include fully synchronous operation referenced to both clock edges, internal bank groups for improved parallelism, dynamic on-chip termination (ODT), ZQ calibration, write leveling, CRC and CA parity related features, data mask function, asynchronous reset, and auto self-refresh. The x16 organization simplifies interfacing on 16-bit-wide memory buses common in embedded and industrial designs.
Architecturally the device is a 4Gb CMOS DDR4 SDRAM that supports burst, interleaved transactions from a double-data-rate command interface, with programmable CAS latency and burst length per the JEDEC DDR4 specification set referenced in the family datasheet. The FBGA-96 surface-mount package supports automated assembly and high routing density.
Typical applications include main memory in embedded systems, industrial controllers, networking equipment, computing modules, and data logging or firmware execution systems requiring large memory density and high bandwidth.
Design consideration: DDR4 signal integrity demands length-matched traces, VTT termination, and careful ZQ resistor placement; verify the controller supports the programmed speed grade and CL before layout freeze.
This page synthesizes distributor availability, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Alternatives de remplacement direct pour H5AN4G6NBJR-PBC — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec H5AN4G6NBJR-PBC (même facteur de forme et même empreinte) — différant par Package, Interface, Density, Asynchronous Reset, RoHS Status.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
H5AN4G6NBJR-UHC
✅ Remplacement direct✓ En stock
$8.09 / unité
Voir la fiche technique →H5AN4G6NBJR-VKC
✅ Remplacement direct✓ En stock
$12.96 / unité
Voir la fiche technique →H5AN4G6NBJR-UHI
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
K4A4G165WD-BCRC
✅ Remplacement direct✓ En stock
$5.1 / unité
Voir la fiche technique →MT40A256M16GE-083E
✅ Remplacement direct✓ En stock
$2.2 / unité
Voir la fiche technique →H5AN4G6NBJR-PBC Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR4 SDRAM |
| Memory Density | 4 Gbit |
| Organisation de la mémoire | 256M x 16 (268435456 words x 16 bits) |
| Supply Voltage (VDD) | 1.2 V |
| Interface | DDR4 (double data rate, synchronous) |
| Package Code | TFBGA |
| Boîtier | FBGA-96 (PBGA96), rectangular |
| Number of Terminals | 96 |
| Type de montage | Surface Mount |
| Caractéristiques | Auto self-refresh, data mask, asynchronous reset, dynamic ODT, ZQ calibration, write leveling, CRC |
| Process | CMOS |
| Lead-Free / Halogen-Free | Yes (per family datasheet, Lead-Free & Halogen-Free) |
| Temperature Grade | OTHER (per distributor listing) |
Guide de configuration des broches du H5AN4G6NBJR-PBC fbga-96 (pbga96), rectangular
Configuration des broches du H5AN4G6NBJR-PBC (boîtier fbga-96 (pbga96), rectangular). Ce circuit intégré numérique comprend des GPIO, des interfaces de communication (UART, SPI, I2C) et des broches d'alimentation. Consultez la fiche technique du fabricant pour les fonctions alternatives des broches et les options de configuration. Indispensable pour la conception de systèmes embarqués et la conception de circuits imprimés.
Aucune donnée de brochage détaillée disponible pour H5AN4G6NBJR-PBC.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
H5AN4G6NBJR-PBC convient pour 6 applications: Embedded System Main Memory, Industrial Controllers and PLCs, Networking and Communication Equipment, Computing Modules and SODIMM-style Boards, Data Logging and Embedded Storage Systems, Automotive-adjacent and Rugged Embedded Systems.
Embedded System Main Memory
The H5AN4G6NBJR-PBC serves as main system memory in embedded processors and SoCs with DDR4 controllers. Its 4Gb density in a single 256M x 16 chip allows a single-device 512MB-class memory subsystem, and two devices back-to-back yield a 32-bit / 1GB bus without a multi-chip module. The 1.2V DDR4 interface cuts memory power roughly 20% versus DDR3, which matters in fanless embedded boxes. Dynamic ODT and ZQ calibration simplify termination networks on point-to-point or lightly loaded buses. Place the DRAM within matched-length range of the controller, use a 2-layer reference plane stackup for the data bus, and follow the controller's DDR4 layout guide for fly-by vs. point-to-point routing to meet eye masks at the target data rate.
Recommandé
Industrial Controllers and PLCs
Industrial controllers require large, high-bandwidth working memory for motion planning, protocol stacks, and HMI buffering. The H5AN4G6NBJR-PBC's 4Gb x16 DDR4 organization provides 512MB per device with JEDEC-standard interface compatibility across vendors, easing second-sourcing on long-lifetime industrial BOMs. Auto self-refresh and the asynchronous reset function support clean recovery after brownout events common on factory floors. The FBGA-96 package withstands reflow and vibration better than edge-connector DIMM solutions when soldered directly to the control board. Design for wide operating temperature margins by verifying junction temperature under worst-case self-refresh and active current, and add copper pour under the ball array to spread heat into the PCB.
Recommandé
Networking and Communication Equipment
Routers, switches, and industrial gateways buffer packets in DDR4 working memory. The H5AN4G6NBJR-PBC's DDR4 bank-group architecture enables multiple open banks for sustained random-access throughput suited to packet buffering and table lookups. The data mask function simplifies partial writes common in buffer management, and CRC features aid link reliability in systems with ECC-capable controllers. A single x16 device serves cost-sensitive edge equipment; multiple devices scale bandwidth for aggregation hardware. Use fly-by clock routing with per-byte dynamic termination when multiple devices share a bus, and follow the SK hynix datasheet termination scheme for VTT generation with a sink-source LDO sized for transient currents at the target data rate.
Recommandé
Computing Modules and SODIMM-style Boards
Computer-on-modules and single-board computers populate the H5AN4G6NBJR-PBC directly on the module PCB to implement soldered-down (non-removable) memory, improving vibration reliability and reducing height versus socketed DIMMs. The 256M x 16 organization allows two or four devices to build 32-bit or 64-bit buses with 1GB to 2GB capacity, typical for ARM-based and x86 embedded modules. JEDEC-standard DDR4 ball mapping preserves interchangeability with Samsung and Micron 4Gb x16 parts, important for module makers managing supply risk. Power design should budget the DRAM core and termination current separately, using a dedicated VTT rail; spread thermal loading with internal copper planes because the BGA dissipates heat into the board.
Recommandé
Data Logging and Embedded Storage Systems
High-speed data acquisition and logging systems use the H5AN4G6NBJR-PBC as a write buffer between sensors and non-volatile storage. The 4Gb density provides hundreds of megabytes of circular buffering, absorbing burst data rates from ADC arrays or camera interfaces while slower flash writes proceed in the background. DDR4's double-data-rate transfers at the controller clock sustain the streaming throughput, and the data mask function enables efficient buffer management. Use self-refresh during idle periods to cut power in battery-powered loggers. Buffer sizing should account for worst-case flash program latency; size the DDR4 write budget so a full erase-block stall never overruns available memory, and add CRC if the controller supports it.
Recommandé
Automotive-adjacent and Rugged Embedded Systems
Rugged embedded platforms - telematics, test instrumentation, and vehicle-mounted gateways - use soldered DDR4 such as the H5AN4G6NBJR-PBC because BGA attachment resists shock and vibration far better than socketed memory. The -I industrial temperature suffix within the same family (H5AN4G6NBJR-xxI) is the drop-in choice when -40C cold-crank or extended ambient requirements apply; the -C grade suits cabin and protected environments. Confirm derating of refresh rate at high temperature per the datasheet (1x to 2x refresh) and budget the associated bandwidth loss. Layout should prioritize impedance control and reference-plane continuity over flexibility routing, and underfill may be specified for severe vibration profiles.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour H5AN4G6NBJR-PBC — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | H5AN4G6NBJR-UHC | H5AN4G6NBJR-VKC | K4A4G165WD-BCRC | MT40A256M16GE-083E |
|---|---|---|---|---|---|
| Package | FBGA-96 (TFBGA) | FBGA-96 - same | FBGA-96 (PBGA96) - same | FBGA-96 - same (JEDEC map) | FBGA-96 - same (JEDEC map) |
| Brand | SK hynix | SK hynix | SK hynix | Samsung | Micron Technology |
| Density / Organization | 4Gb / 256M x 16 | 4Gb / 256M x 16 | 4Gb / 256M x 16 | 4Gb / 256M x 16 | 4Gb / 256M x 16 |
| Interface / VDD | DDR4 / 1.2 V | DDR4 / 1.2 V | DDR4 / 1.2 V | DDR4 / 1.2 V | DDR4 / 1.2 V |
| Key Features | Auto self-refresh, DQM, async reset, dynamic ODT, ZQ cal, write leveling, CRC | Same family feature set; -40C to +95C self-refresh support | Same family feature set, higher speed bin | Standard DDR4 feature set | Standard DDR4 feature set |
| Primary Use Case Fit | Embedded/industrial main memory at PBC speed bin | Same, when UH bin timing suffices | Higher-bandwidth designs | Second-source for Samsung-approved BOMs | Second-source for Micron-approved BOMs |
Principaux différenciateurs
- Higher-bandwidth speed bin option available in same footprint (vs H5AN4G6NBJR-VKC)
- Wider temperature self-refresh support in sibling part (vs H5AN4G6NBJR-UHC)
- Vendor-locked JEDEC compatibility enables cross-brand second sourcing (vs K4A4G165WD-BCRC)
Notes de conception
DDR4 at speed requires controlled-impedance routing (40 ohm single-ended typical) and length matching: keep data-byte skew within the controller spec (commonly +/-10 ps class) and address/command fly-by routing with per-DIMM-style termination for multi-device buses. For a point-to-point single-chip design, dynamic ODT and ZQ calibration (external 240-ohm 1% RZQ resistor) handle most termination, but still maintain a continuous reference plane under all data traces. Run IBIS-simulation of the eye diagram before committing the PCB stackup.
Budget three rails per JEDEC DDR4: VDD 1.2V (core), VPP 2.5V (wordline pump), and VTT 0.6V termination rail. Estimated: for a single x16 device with 8 data DQ signals terminating at 40 ohm effective, VTT transient currents can reach several hundred milliamps; use a dedicated sink-source VTT LDO with bulk capacitance near the DRAM. Do not share VTT with other analog loads - termination noise coupling corrupts setup/hold margins.
Verify speed-grade matching before substitution: -PBC, -UHC, and -VKC bins differ in supported data rate and CAS latency, and the controller's memory-training tables are vendor- and bin-specific. Also confirm refresh requirements at elevated temperature (2x refresh above 85C per JEDEC practice) when using -C grade parts near the top of range. Finally, when swapping to Samsung or Micron equivalents, re-run controller read/write training because DRAM vendor timing tables and ODT settings are not bit-identical.
Informations de conformité
Family datasheet title identifies H5AN4G6NBJR-xxC parts as Lead-Free & Halogen-Free. REACH and conflict-minerals statements not found in provided data.
