K4RBH165VB-BCWM - 16Gb DDR5 SDRAM 1.1V FBGA | Samsung
Référence : K4RBH165VB-BCWM ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $12.22 | $12,22 |
| 10 | $11.6 | $116,00 |
| 100 | $10.95 | $1 095,00 |
| 500 | $10.4 | $5 200,00 |
| 1 000 | $9.85 | $9 850,00 |
K4RBH165VB-BCWM Présentation
DDR5 SDRAM (Double Data Rate 5 synchronous dynamic random-access memory) is the fifth generation of the JEDEC DDR memory family. In the system hierarchy it sits as: DDR5 SDRAM -> DRAM -> volatile memory IC -> semiconductor memory. Compared with DDR4, DDR5 doubles the internal bank count, moves the power management onto the module with a PMIC, and halves the per-channel word length to improve concurrency and effective bandwidth.
Key features of this device include its 16 Gbit single-die density, a x16 data organization suited to designs that populate fewer devices per channel, a low 1.1V core voltage that reduces dynamic power relative to DDR4's 1.2V, and an industrial 0C to +85C operating range. On-chip error correction code (ECC), write CRC, write leveling, auto self-refresh, and asynchronous reset - features documented for the Samsung 16Gb B-die DDR5 x16 family - improve data integrity and signal integrity margins at high data rates.
Technically, the device operates in DLL-enabled mode per the Samsung 16Gb DDR5 specification (Rev 1.x series), which governs the timing parameters for command and data transfer. Ball-out, refresh scheduling, and mode register definitions follow JEDEC DDR5 conventions, allowing drop-in use on standard DDR5 x16 footprints within the same speed-grade family.
Typical applications include data-center server memory subsystems, high-performance computing platforms, industrial systems requiring long-term DDR5 availability, and mobile/consumer platforms using discrete x16 DRAM.
A key design consideration: DDR5 requires an external power management IC for the 1.1V VDD rail, and on-die ECC must be accounted for when matching this part against module-level ECC designs.
This page adds value beyond the datasheet by synthesizing distributor stock and pricing data, drop-in alternatives from the same Samsung DDR5 x16 family, and practical design notes in one place.
Alternatives de remplacement direct pour K4RBH165VB-BCWM — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec K4RBH165VB-BCWM (même facteur de forme et même empreinte) — différant par Package, Operating Temperature, Density, Data Rate, Interface.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
K4RBH165VB-BCQK
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
Contactez-nous pour le prix
Voir la fiche technique →K4RAH165VB-BCWM
✅ Remplacement direct✓ En stock
$9.92 / unité
Voir la fiche technique →K4RAH165VB-BCQK
✅ Remplacement direct✓ En stock
Contactez-nous pour le prix
Voir la fiche technique →K4RHE165VB-BCWM
✅ Remplacement direct✓ En stock
Contactez-nous pour le prix
Voir la fiche technique →K4RBH086VB-BCWM
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
Contactez-nous pour le prix
Voir la fiche technique →K4RHE086VB-BCWM
✅ Remplacement direct✓ En stock
$7.65 / unité
Voir la fiche technique →K4RBH165VB-BCWM Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR5 SDRAM |
| Density | 16 Gbit |
| Organisation de la mémoire | 1G x 16 |
| Supply Voltage (VDD) | 1.1 V |
| Data Rate Class | DDR5 5600 Mbps (family per Octopart listing of sibling part) |
| Boîtier | FBGA-106 |
| Type de montage | Surface Mount |
| Température de fonctionnement | 0C to +85C |
| On-Die ECC | Yes |
| Write CRC | Yes |
| Write Leveling | Yes |
| Auto Self-Refresh | Yes |
| Asynchronous Reset | Yes |
| Operating Mode | DLL Enabled |
| Statut RoHS | Compliant |
| Lead Free | Yes |
Guide de configuration des broches du K4RBH165VB-BCWM fbga-106
Configuration des broches du K4RBH165VB-BCWM (boîtier fbga-106). Ce circuit intégré numérique comprend des GPIO, des interfaces de communication (UART, SPI, I2C) et des broches d'alimentation. Consultez la fiche technique du fabricant pour les fonctions alternatives des broches et les options de configuration. Indispensable pour la conception de systèmes embarqués et la conception de circuits imprimés.
Aucune donnée de brochage détaillée disponible pour K4RBH165VB-BCWM.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
K4RBH165VB-BCWM convient pour 6 applications: Data Center Server Memory, High-Performance Computing, Industrial Long-Life Systems, Networking and Communications Equipment, Consumer Electronics and Mobile Platforms, Embedded and Custom Memory Modules.
Data Center Server Memory
The K4RBH165VB-BCWM's 16 Gbit density and on-die ECC make it a strong fit for data-center memory subsystems, where areal density and reliability dominate design trade-offs. Samsung's 16Gb DDR5 B-die family is explicitly deployed in DDR5 memory solutions for data centers per distributor documentation. The 1.1V VDD reduces per-DRAM dynamic power compared with DDR4's 1.2V, which scales meaningfully across hundreds of DRAMs per server. In custom module or board-level designs, the x16 organization lets one device carry a full 16-bit channel slice, reducing component count. Performance planning should use the datasheet IDD tables at the target data-rate bin, as refresh overhead (IDD5) affects effective bandwidth at high temperatures.
Recommandé
High-Performance Computing
HPC accelerators and compute blades benefit from the K4RBH165VB-BCWM's combination of 16 Gbit density, 5600 Mbps-class DDR5 bandwidth, and the x16 organization that supports fewer devices per channel. High bandwidth-per-watt is critical in compute-dense racks, and the 1.1V core supply plus DDR5's improved bank parallelism (double the bank groups of DDR4) help sustain concurrent access streams. The IBS Electronics listing specifically targets this family at high-performance computing and data-intensive applications. Designers should budget read/write turnaround penalties and verify timing at the DLL-enabled mode parameters defined in the Samsung specification.
Recommandé
Industrial Long-Life Systems
Industrial controllers and edge servers require memory components with long-term availability and stable supply, a stated rationale for this family's industrial deployment per Sourcememorychips. The K4RBH165VB-BCWM's 0C to +85C operating range covers typical industrial enclosures, and on-die ECC protects against soft errors that accumulate over years of continuous operation in electrically noisy environments. The asynchronous reset feature simplifies power-rail sequencing recovery after brown-out events common in factory power networks. For harsher ambient conditions, evaluate the K4RHE165VB-BCWM extended variant within the same FBGA-106 footprint.
Recommandé
Networking and Communications Equipment
Routers, switches, and 5G infrastructure line cards use DDR5 for deep packet buffers and flow tables. The K4RBH165VB-BCWM's 1G x 16 organization matches the 16-bit-wide memory channels typical of network processors, and 5600 Mbps-class DDR5 bandwidth supports high packet rates with headroom for buffering bursts. Auto self-refresh allows the buffer memory to hold state with minimal background power during idle periods, useful in energy-efficient networking designs. Layout should follow DDR5 length-matching and on-die termination guidelines; write CRC helps protect buffered data integrity on long backplanes.
Recommandé
Consumer Electronics and Mobile Platforms
Distributor wolfchip notes this Samsung DDR5 portfolio serves mobile devices, tablets, and consumer electronics. The x16 organization and FBGA-106 footprint suit compact single-channel or low-population designs where module-style DIMMs are impractical, such as set-top boxes, smart displays, and embedded consumer platforms. The 1.1V supply aligns with battery-operated and always-on consumer power budgets, and on-die ECC improves stability without external ECC devices. Designers should confirm the commercial temperature range covers the product enclosure, since mobile-grade variants of the 16Gb family exist for extended conditions.
Recommandé
Embedded and Custom Memory Modules
Custom DDR5 SODIMM, CAMM2-style, and soldered-down embedded memory designs can populate the K4RBH165VB-BCWM across a 64-bit bus with multiple x16 devices. DDR5's split-channel architecture (two independent 8-bit sub-channels per DIMM) pairs naturally with x16 devices, improving concurrency for embedded workloads like storage controllers and industrial PCs. The -BCWM suffix's commercial grading fits indoor embedded environments. SPD programming, address-rank configuration, and the PMIC-based 1.1V rail delivery must be designed per JEDEC DDR5 module conventions; verify tINIT timing for the power-management IC handshake.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour K4RBH165VB-BCWM — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | K4RBH165VB-BCQK | K4RAH165VB-BCWM | K4RAH165VB-BCQK | K4RHE165VB-BCWM |
|---|---|---|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Package | FBGA-106 | FBGA-106 - same | FBGA-106 - same | FBGA-106 - same | FBGA-106 - same |
| Density | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit |
| Organization | 1G x 16 | 1G x 16 | 1G x 16 | 1G x 16 | 1G x 16 |
| Supply Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| Memory Generation | RBH generation | RBH generation - same | RAH generation (prior) | RAH generation (prior) | RHE generation (efficiency grading) |
| Operating Temperature | 0C to +85C | 0C to +85C | 0C to +85C | 0C to +85C | 0C to +85C |
Principaux différenciateurs
- Latest RBH process generation within Samsung's DDR5 16Gb portfolio (vs K4RAH165VB-BCWM)
- Suffix flexibility for multi-sourcing (vs K4RBH165VB-BCQK)
- Full 16Gb density on a single x16 device (vs K4RBH086VB-BCWM)
- DDR5 generation features (on-die ECC, 1.1V, dual sub-channels) (vs K4AAG165WM-BCWE (DDR4 16Gb))
Notes de conception
DDR5 moves power management off the memory module: the K4RBH165VB-BCWM's 1.1V VDD must be delivered by a dedicated power management IC (PMIC, e.g. a DDR5 PMIC per JEDEC module spec), not the chipset. Budget for VDD, VDDQ, and VPP rails and follow the PMIC's sequencing requirements. Verify initial power-up tINIT timing before issuing the first MRS command. Sizing the 1.1V rail for peak IDD4 read/write currents at the target data rate avoids droop-related refresh errors.
FBGA-106 fanout requires careful escape routing on the top layer with via-in-pad or dog-bone escapes. Follow DDR5 fly-by/short-toppology rules: keep DQ/DQS length matching within the datasheet skew budget, use the controller's on-die termination (ODT) settings per the Samsung mode register definitions, and reference signal layers to a solid ground plane. On-die ECC and write CRC reduce but do not eliminate the need for clean signal integrity; eye-mask compliance at 5600 Mbps-class rates still depends on layout discipline.
The Samsung 16Gb DDR5 B-die datasheet explicitly states it is an abstract covering DLL-enabled mode only; common device-operation features (mode register details, refresh scheduling) live in the separate Device Operation Datasheet. Do not design timings from the abstract alone. Also, the K4RBH and K4RAH prefixes denote different process generations - while footprint-compatible, verify speed bins and SPD data before interchanging them on the same board, and always validate the -BCWM vs -BCQK suffix against your controller's supported rate.
Informations de conformité
RoHS compliance stated in JLCPCB and IBS Electronics listings for the same-family part. REACH, halogen-free, and conflict-minerals declarations not found in retrieved data - request Samsung formal declarations.
