K4RBH165VB-BCWM - 16Gb DDR5 SDRAM 1.1V FBGA | Samsung
MPN: K4RBH165VB-BCWM ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $12.22 | $12.22 |
| 10 | $11.6 | $116.00 |
| 100 | $10.95 | $1,095.00 |
| 500 | $10.4 | $5,200.00 |
| 1,000 | $9.85 | $9,850.00 |
Drop-in alternatives for K4RBH165VB-BCWM — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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K4RBH165VB-BCQK
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View Datasheet →K4RAH165VB-BCWM
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$9.92 / Unit
View Datasheet →K4RAH165VB-BCQK
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View Datasheet →K4RHE165VB-BCWM
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View Datasheet →K4RBH086VB-BCWM
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View Datasheet →K4RHE086VB-BCWM
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$7.65 / Unit
View Datasheet →K4RBH165VB-BCWM Maximum Ratings & Electrical Characteristics
| Memory Type | DDR5 SDRAM |
| Density | 16 Gbit |
| Organization | 1G x 16 |
| Supply Voltage (VDD) | 1.1 V |
| Data Rate Class | DDR5 5600 Mbps (family per Octopart listing of sibling part) |
| Package | FBGA-106 |
| Mounting Type | Surface Mount |
| Operating Temperature | 0C to +85C |
| On-Die ECC | Yes |
| Write CRC | Yes |
| Write Leveling | Yes |
| Auto Self-Refresh | Yes |
| Asynchronous Reset | Yes |
| Operating Mode | DLL Enabled |
| RoHS Status | Compliant |
| Lead Free | Yes |
K4RBH165VB-BCWM fbga-106 Pin Configuration Guide
Complete pinout information for K4RBH165VB-BCWM (fbga-106 package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for K4RBH165VB-BCWM.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K4RBH165VB-BCWM is suitable for 6 applications: Data Center Server Memory, High-Performance Computing, Industrial Long-Life Systems, Networking and Communications Equipment, Consumer Electronics and Mobile Platforms, Embedded and Custom Memory Modules.
Data Center Server Memory
The K4RBH165VB-BCWM's 16 Gbit density and on-die ECC make it a strong fit for data-center memory subsystems, where areal density and reliability dominate design trade-offs. Samsung's 16Gb DDR5 B-die family is explicitly deployed in DDR5 memory solutions for data centers per distributor documentation. The 1.1V VDD reduces per-DRAM dynamic power compared with DDR4's 1.2V, which scales meaningfully across hundreds of DRAMs per server. In custom module or board-level designs, the x16 organization lets one device carry a full 16-bit channel slice, reducing component count. Performance planning should use the datasheet IDD tables at the target data-rate bin, as refresh overhead (IDD5) affects effective bandwidth at high temperatures.
Recommended
High-Performance Computing
HPC accelerators and compute blades benefit from the K4RBH165VB-BCWM's combination of 16 Gbit density, 5600 Mbps-class DDR5 bandwidth, and the x16 organization that supports fewer devices per channel. High bandwidth-per-watt is critical in compute-dense racks, and the 1.1V core supply plus DDR5's improved bank parallelism (double the bank groups of DDR4) help sustain concurrent access streams. The IBS Electronics listing specifically targets this family at high-performance computing and data-intensive applications. Designers should budget read/write turnaround penalties and verify timing at the DLL-enabled mode parameters defined in the Samsung specification.
Recommended
Industrial Long-Life Systems
Industrial controllers and edge servers require memory components with long-term availability and stable supply, a stated rationale for this family's industrial deployment per Sourcememorychips. The K4RBH165VB-BCWM's 0C to +85C operating range covers typical industrial enclosures, and on-die ECC protects against soft errors that accumulate over years of continuous operation in electrically noisy environments. The asynchronous reset feature simplifies power-rail sequencing recovery after brown-out events common in factory power networks. For harsher ambient conditions, evaluate the K4RHE165VB-BCWM extended variant within the same FBGA-106 footprint.
Recommended
Networking and Communications Equipment
Routers, switches, and 5G infrastructure line cards use DDR5 for deep packet buffers and flow tables. The K4RBH165VB-BCWM's 1G x 16 organization matches the 16-bit-wide memory channels typical of network processors, and 5600 Mbps-class DDR5 bandwidth supports high packet rates with headroom for buffering bursts. Auto self-refresh allows the buffer memory to hold state with minimal background power during idle periods, useful in energy-efficient networking designs. Layout should follow DDR5 length-matching and on-die termination guidelines; write CRC helps protect buffered data integrity on long backplanes.
Recommended
Consumer Electronics and Mobile Platforms
Distributor wolfchip notes this Samsung DDR5 portfolio serves mobile devices, tablets, and consumer electronics. The x16 organization and FBGA-106 footprint suit compact single-channel or low-population designs where module-style DIMMs are impractical, such as set-top boxes, smart displays, and embedded consumer platforms. The 1.1V supply aligns with battery-operated and always-on consumer power budgets, and on-die ECC improves stability without external ECC devices. Designers should confirm the commercial temperature range covers the product enclosure, since mobile-grade variants of the 16Gb family exist for extended conditions.
Recommended
Embedded and Custom Memory Modules
Custom DDR5 SODIMM, CAMM2-style, and soldered-down embedded memory designs can populate the K4RBH165VB-BCWM across a 64-bit bus with multiple x16 devices. DDR5's split-channel architecture (two independent 8-bit sub-channels per DIMM) pairs naturally with x16 devices, improving concurrency for embedded workloads like storage controllers and industrial PCs. The -BCWM suffix's commercial grading fits indoor embedded environments. SPD programming, address-rank configuration, and the PMIC-based 1.1V rail delivery must be designed per JEDEC DDR5 module conventions; verify tINIT timing for the power-management IC handshake.
Recommended
Recommended Products Summary
Engineering reference data for K4RBH165VB-BCWM — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K4RBH165VB-BCQK | K4RAH165VB-BCWM | K4RAH165VB-BCQK | K4RHE165VB-BCWM |
|---|---|---|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Package | FBGA-106 | FBGA-106 - same | FBGA-106 - same | FBGA-106 - same | FBGA-106 - same |
| Density | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit |
| Organization | 1G x 16 | 1G x 16 | 1G x 16 | 1G x 16 | 1G x 16 |
| Supply Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| Memory Generation | RBH generation | RBH generation - same | RAH generation (prior) | RAH generation (prior) | RHE generation (efficiency grading) |
| Operating Temperature | 0C to +85C | 0C to +85C | 0C to +85C | 0C to +85C | 0C to +85C |
| Price (qty 1) | $12.22 (as of 2026-09-04, family reference) | [DATA_NEEDED] | $12.2158 (LCSC) | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Latest RBH process generation within Samsung's DDR5 16Gb portfolio (vs K4RAH165VB-BCWM)
- Suffix flexibility for multi-sourcing (vs K4RBH165VB-BCQK)
- Full 16Gb density on a single x16 device (vs K4RBH086VB-BCWM)
- DDR5 generation features (on-die ECC, 1.1V, dual sub-channels) (vs K4AAG165WM-BCWE (DDR4 16Gb))
Design Notes
DDR5 moves power management off the memory module: the K4RBH165VB-BCWM's 1.1V VDD must be delivered by a dedicated power management IC (PMIC, e.g. a DDR5 PMIC per JEDEC module spec), not the chipset. Budget for VDD, VDDQ, and VPP rails and follow the PMIC's sequencing requirements. Verify initial power-up tINIT timing before issuing the first MRS command. Sizing the 1.1V rail for peak IDD4 read/write currents at the target data rate avoids droop-related refresh errors.
FBGA-106 fanout requires careful escape routing on the top layer with via-in-pad or dog-bone escapes. Follow DDR5 fly-by/short-toppology rules: keep DQ/DQS length matching within the datasheet skew budget, use the controller's on-die termination (ODT) settings per the Samsung mode register definitions, and reference signal layers to a solid ground plane. On-die ECC and write CRC reduce but do not eliminate the need for clean signal integrity; eye-mask compliance at 5600 Mbps-class rates still depends on layout discipline.
The Samsung 16Gb DDR5 B-die datasheet explicitly states it is an abstract covering DLL-enabled mode only; common device-operation features (mode register details, refresh scheduling) live in the separate Device Operation Datasheet. Do not design timings from the abstract alone. Also, the K4RBH and K4RAH prefixes denote different process generations - while footprint-compatible, verify speed bins and SPD data before interchanging them on the same board, and always validate the -BCWM vs -BCQK suffix against your controller's supported rate.
Compliance Information
RoHS compliance stated in JLCPCB and IBS Electronics listings for the same-family part. REACH, halogen-free, and conflict-minerals declarations not found in retrieved data - request Samsung formal declarations.
