1EDN7512GXTMA1 vs 1EDN7116GXTMA1 Perbandingan

Perbandingan bersamaan detil 1EDN7512GXTMA1 dari Infineon dan 1EDN7116GXTMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
1EDN7512GXTMA1 1EDN7512GXTMA1 - 4A/8A Low-Side Gate Driver | Infineon

1EDN7512GXTMA1 - 4A/8A Low-Side Gate Driver | Infineon

1EDN7512GXTMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum 1EDN7512GXTMA1 1EDN7116GXTMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi Low-side gate driver, single channel Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs
Peak Source Current 4 A 2 A (typ)
Peak Sink Current 8 A 4 A (typ)
Jumlah Output 1 —
Logic Inputs Inverting and Non-Inverting —
Propagation Delay (typical) 19 ns —
Rentang Tegangan Masukan [DATA_NEEDED: VCC range] —
Input Robustness (negative) -10 V —
Waktu naik [DATA_NEEDED: typical tr] —
Waktu Menurun [DATA_NEEDED: typical tf] —
UVLO [DATA_NEEDED: UVLO threshold] Yes (VCC and gate-rail monitored)
Rentang Suhu Kerja -40 C to +125 C -40 °C to +125 °C
Paket PG-WSON-6-1 (6-pin WSON with exposed pad) PG-VSON-10-4 (3.0 mm × 3.0 mm)
Tipe Mounting Surface Mount Surface Mount
Level MSL [DATA_NEEDED: MSL rating] MSL3
Status RoHS Compliant Compliant
Lead-Free Yes —
Driver Configuration — Non-inverting, single low-side
Number of Drivers — 1
Input Type — Truly Differential Input (TDI)
Supply Voltage (VCC) — 4.5 V to 5.5 V
Switch-Node Blocking Voltage — 200 V (max)
Propagation Delay (Typ) — 9 ns
Rise Time (Typ) — 3 ns
Fall Time (Typ) — 3 ns
Quiescent Current (Typ) — 0.6 mA
Miller Clamp — Integrated, active
Target Switch Technology — GaN HEMT (CoolGaN) or Si MOSFET

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