1EDN7512GXTMA1 vs 1EDN7116GXTMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 1EDN7512GXTMA1 disebabkan oleh Infineon dan 1EDN7116GXTMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
1EDN7512GXTMA1 1EDN7512GXTMA1 - 4A/8A Low-Side Gate Driver | Infineon

1EDN7512GXTMA1 - 4A/8A Low-Side Gate Driver | Infineon

1EDN7512GXTMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr 1EDN7512GXTMA1 1EDN7116GXTMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi Low-side gate driver, single channel Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs
Peak Source Current 4 A 2 A (typ)
Peak Sink Current 8 A 4 A (typ)
Bilangan Output 1 —
Logic Inputs Inverting and Non-Inverting —
Propagation Delay (typical) 19 ns —
Gambaran Tegangan Masukan [DATA_NEEDED: VCC range] —
Input Robustness (negative) -10 V —
Masa Pertambahan [DATA_NEEDED: typical tr] —
Masa jatuh [DATA_NEEDED: typical tf] —
UVLO [DATA_NEEDED: UVLO threshold] Yes (VCC and gate-rail monitored)
Gambaran Suhu Operasi -40 C to +125 C -40 °C to +125 °C
Kemasan PG-WSON-6-1 (6-pin WSON with exposed pad) PG-VSON-10-4 (3.0 mm × 3.0 mm)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL [DATA_NEEDED: MSL rating] MSL3
Status RoHS Compliant Compliant
Lead-Free Yes —
Driver Configuration — Non-inverting, single low-side
Number of Drivers — 1
Input Type — Truly Differential Input (TDI)
Supply Voltage (VCC) — 4.5 V to 5.5 V
Switch-Node Blocking Voltage — 200 V (max)
Propagation Delay (Typ) — 9 ns
Rise Time (Typ) — 3 ns
Fall Time (Typ) — 3 ns
Quiescent Current (Typ) — 0.6 mA
Miller Clamp — Integrated, active
Target Switch Technology — GaN HEMT (CoolGaN) or Si MOSFET

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