1EDN7512GXTMA1 vs 1EDN7116GXTMA1 比較

詳細並排比較 1EDN7512GXTMA1 由 Infineon 與 1EDN7116GXTMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
1EDN7512GXTMA1 1EDN7512GXTMA1 - 4A/8A Low-Side Gate Driver | Infineon

1EDN7512GXTMA1 - 4A/8A Low-Side Gate Driver | Infineon

1EDN7512GXTMA1 ✓ 啟用中

規格比較

參數 1EDN7512GXTMA1 1EDN7116GXTMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
功能 Low-side gate driver, single channel Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs
Peak Source Current 4 A 2 A (typ)
Peak Sink Current 8 A 4 A (typ)
輸出數量 1 —
Logic Inputs Inverting and Non-Inverting —
Propagation Delay (typical) 19 ns —
輸入電壓範圍 [DATA_NEEDED: VCC range] —
Input Robustness (negative) -10 V —
上升時間 [DATA_NEEDED: typical tr] —
下降時間 [DATA_NEEDED: typical tf] —
UVLO [DATA_NEEDED: UVLO threshold] Yes (VCC and gate-rail monitored)
工作溫度範圍 -40 C to +125 C -40 °C to +125 °C
封裝 PG-WSON-6-1 (6-pin WSON with exposed pad) PG-VSON-10-4 (3.0 mm × 3.0 mm)
安裝類型 Surface Mount Surface Mount
MSL 等級 [DATA_NEEDED: MSL rating] MSL3
RoHS 狀態 Compliant Compliant
Lead-Free Yes —
Driver Configuration — Non-inverting, single low-side
Number of Drivers — 1
Input Type — Truly Differential Input (TDI)
Supply Voltage (VCC) — 4.5 V to 5.5 V
Switch-Node Blocking Voltage — 200 V (max)
Propagation Delay (Typ) — 9 ns
Rise Time (Typ) — 3 ns
Fall Time (Typ) — 3 ns
Quiescent Current (Typ) — 0.6 mA
Miller Clamp — Integrated, active
Target Switch Technology — GaN HEMT (CoolGaN) or Si MOSFET

資料表與資源

瀏覽所有產品 建立 BOM 索取報價