1EDN7512GXTMA1 vs 1EDN7116GXTMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng 1EDN7512GXTMA1 sa pamamagitan ng Infineon at 1EDN7116GXTMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
1EDN7116GXTMA1 - 200V Single-Channel GaN Gate Driver IC | Infineon
1EDN7116GXTMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | 1EDN7512GXTMA1 | 1EDN7116GXTMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | Power MOSFET Drivers | Power MOSFET Drivers |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Fungsi | Low-side gate driver, single channel | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs |
| Peak Source Current | 4 A | 2 A (typ) |
| Peak Sink Current | 8 A | 4 A (typ) |
| Bilang ng Outputs | 1 | — |
| Logic Inputs | Inverting and Non-Inverting | — |
| Propagation Delay (typical) | 19 ns | — |
| Hanay ng Voltage ng Input | [DATA_NEEDED: VCC range] | — |
| Input Robustness (negative) | -10 V | — |
| Oras ng Pagtaas | [DATA_NEEDED: typical tr] | — |
| Time ng Pagbaba | [DATA_NEEDED: typical tf] | — |
| UVLO | [DATA_NEEDED: UVLO threshold] | Yes (VCC and gate-rail monitored) |
| Hanay ng Temperature na Operasyon | -40 C to +125 C | -40 °C to +125 °C |
| Packhaging | PG-WSON-6-1 (6-pin WSON with exposed pad) | PG-VSON-10-4 (3.0 mm × 3.0 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | [DATA_NEEDED: MSL rating] | MSL3 |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Driver Configuration | — | Non-inverting, single low-side |
| Number of Drivers | — | 1 |
| Input Type | — | Truly Differential Input (TDI) |
| Supply Voltage (VCC) | — | 4.5 V to 5.5 V |
| Switch-Node Blocking Voltage | — | 200 V (max) |
| Propagation Delay (Typ) | — | 9 ns |
| Rise Time (Typ) | — | 3 ns |
| Fall Time (Typ) | — | 3 ns |
| Quiescent Current (Typ) | — | 0.6 mA |
| Miller Clamp | — | Integrated, active |
| Target Switch Technology | — | GaN HEMT (CoolGaN) or Si MOSFET |