1EDN8511BXUSA1 vs 1EDN7511B Perbandingan

Perbandingan bersamaan detil 1EDN8511BXUSA1 dari Infineon dan 1EDN7511B dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 1EDN8511BXUSA1 1EDN7511B
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Channel Count 1 —
Driver Configuration Low-side —
Peak Source Current 4 A 4 A
Peak Sink Current 8 A 8 A
Input Stage Inverting and non-inverting —
Propagation Delay Accuracy [DATA_NEEDED: typical propagation delay] —
UVLO Threshold 8 V —
Driver Supply Voltage (VCC) [DATA_NEEDED: VCC range upper limit] —
Suhu Hubung Kerja -40 °C to +150 °C —
Paket PG-SOT23-6-2 SOT-23-6 (PG-SOT23-6-2)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 6 —
Logic Input Compatibility TTL / CMOS —
Target Switch Type Power MOSFET, GaN HEMT —
Status RoHS Compliant Compliant
Level MSL [DATA_NEEDED: MSL rating] —
Driver Type — Single-channel low-side gate driver
Number of Channels — 1
Supply Voltage (VCC) — 4.5 V to 20 V
UVLO Threshold (logic-level variant) — 1.9 V to 2.3 V
UVLO Threshold (normal-level variant) — 800 mV to 1.2 V (typ)
Propagation Delay — 4.5 ns (typ)
Rise Time (typ) — 19 ns
Fall Time (typ) — 19 ns
Output On-Resistance (pull-up) — 0.85 ohm
Output On-Resistance (pull-down) — 0.35 ohm
Input Logic — Inverting + Non-inverting
Suhu Kerja — -40 C to +150 C
Supported Switches — MOSFET (OptiMOS, CoolMOS), GaN HEMT

Spek dan Sumber

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