1EDN8511BXUSA1 vs 1EDN7511B Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 1EDN8511BXUSA1 disebabkan oleh Infineon dan 1EDN7511B disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 1EDN8511BXUSA1 1EDN7511B
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Channel Count 1 —
Driver Configuration Low-side —
Peak Source Current 4 A 4 A
Peak Sink Current 8 A 8 A
Input Stage Inverting and non-inverting —
Propagation Delay Accuracy [DATA_NEEDED: typical propagation delay] —
UVLO Threshold 8 V —
Driver Supply Voltage (VCC) [DATA_NEEDED: VCC range upper limit] —
Suhu Hubungan Operasi -40 °C to +150 °C —
Kemasan PG-SOT23-6-2 SOT-23-6 (PG-SOT23-6-2)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 6 —
Logic Input Compatibility TTL / CMOS —
Target Switch Type Power MOSFET, GaN HEMT —
Status RoHS Compliant Compliant
Aras MSL [DATA_NEEDED: MSL rating] —
Driver Type — Single-channel low-side gate driver
Number of Channels — 1
Supply Voltage (VCC) — 4.5 V to 20 V
UVLO Threshold (logic-level variant) — 1.9 V to 2.3 V
UVLO Threshold (normal-level variant) — 800 mV to 1.2 V (typ)
Propagation Delay — 4.5 ns (typ)
Rise Time (typ) — 19 ns
Fall Time (typ) — 19 ns
Output On-Resistance (pull-up) — 0.85 ohm
Output On-Resistance (pull-down) — 0.35 ohm
Input Logic — Inverting + Non-inverting
Suhu Operasi — -40 C to +150 C
Supported Switches — MOSFET (OptiMOS, CoolMOS), GaN HEMT

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