FDP030N06 vs IRFB7534PBF Perbandingan
Perbandingan bersamaan detil FDP030N06 dari onsemi dan IRFB7534PBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | FDP030N06 | IRFB7534PBF |
|---|---|---|
| Merek | onsemi | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel MOSFET | — |
| Technology | PowerTrench (Trench) | StrongIRFET™ (planar N-channel) |
| Drain to Source Voltage (Vdss) | 60 V | — |
| Continuous Drain Current (Id) @ 25C | 120 A (Tc) | — |
| Continuous Drain Current (datasheet rating) | 193 A (Tc, datasheet title rating) | — |
| RDS(on) Max @ Id, Vgs | 3.2 mOhm | — |
| RDS(on) Typ | 2.6 mOhm | — |
| Power Dissipation (Tc) | 231 W (Tc) | — |
| Gate Drive Type | Standard level gate drive | — |
| Switching Speed | Fast | — |
| Gate Input Resistance | Low gate input resistance (low gate charge) | — |
| Avalanche Test | 100% avalanche tested | — |
| Paket | TO-220-3 (3+Tab) | TO-220AB |
| Tipe Mounting | Through Hole | Through Hole |
| Packing | Tube | — |
| Typical Applications | Power supply, switching applications | — |
| Status RoHS | [DATA_NEEDED: RoHS compliance status] | Compliant (PbF suffix) |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IRFB7534PBF |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) max | — | 60 V |
| Continuous Drain Current (ID) at Tc=25C | — | 195 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Power Dissipation (PD) at Tc=25C | — | 294 W |
| On-Resistance RDS(on) max at VGS=10V | — | 2.4 mOhm |
| Gate Threshold Voltage VGS(th) | — | 3.7 V (typ) |
| Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Avalanche Energy Rated | — | Yes |
| Rentang Suhu Kerja | — | -55C to +175C |
| Level MSL | — | MSL1 (unlimited floor life) |