FDP030N06 vs IRFB7534PBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng FDP030N06 sa pamamagitan ng onsemi at IRFB7534PBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro FDP030N06 IRFB7534PBF
Brand onsemi Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel MOSFET —
Technology PowerTrench (Trench) StrongIRFET™ (planar N-channel)
Drain to Source Voltage (Vdss) 60 V —
Continuous Drain Current (Id) @ 25C 120 A (Tc) —
Continuous Drain Current (datasheet rating) 193 A (Tc, datasheet title rating) —
RDS(on) Max @ Id, Vgs 3.2 mOhm —
RDS(on) Typ 2.6 mOhm —
Power Dissipation (Tc) 231 W (Tc) —
Gate Drive Type Standard level gate drive —
Switching Speed Fast —
Gate Input Resistance Low gate input resistance (low gate charge) —
Avalanche Test 100% avalanche tested —
Packhaging TO-220-3 (3+Tab) TO-220AB
Uri ng Pagpapasok Through Hole Through Hole
Packing Tube —
Typical Applications Power supply, switching applications —
Tindminan RoHS [DATA_NEEDED: RoHS compliance status] Compliant (PbF suffix)
Manufacturer — Infineon Technologies
Part Number — IRFB7534PBF
Uri ng Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) max — 60 V
Continuous Drain Current (ID) at Tc=25C — 195 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
Power Dissipation (PD) at Tc=25C — 294 W
On-Resistance RDS(on) max at VGS=10V — 2.4 mOhm
Gate Threshold Voltage VGS(th) — 3.7 V (typ)
Gate Charge Qg — [DATA_NEEDED: total gate charge]
Avalanche Energy Rated — Yes
Hanay ng Temperature na Operasyon — -55C to +175C
Level ng MSL — MSL1 (unlimited floor life)

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