FDP030N06 vs IRFB7534PBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci FDP030N06 disebabkan oleh onsemi dan IRFB7534PBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | FDP030N06 | IRFB7534PBF |
|---|---|---|
| Merek | onsemi | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel MOSFET | — |
| Technology | PowerTrench (Trench) | StrongIRFET™ (planar N-channel) |
| Drain to Source Voltage (Vdss) | 60 V | — |
| Continuous Drain Current (Id) @ 25C | 120 A (Tc) | — |
| Continuous Drain Current (datasheet rating) | 193 A (Tc, datasheet title rating) | — |
| RDS(on) Max @ Id, Vgs | 3.2 mOhm | — |
| RDS(on) Typ | 2.6 mOhm | — |
| Power Dissipation (Tc) | 231 W (Tc) | — |
| Gate Drive Type | Standard level gate drive | — |
| Switching Speed | Fast | — |
| Gate Input Resistance | Low gate input resistance (low gate charge) | — |
| Avalanche Test | 100% avalanche tested | — |
| Kemasan | TO-220-3 (3+Tab) | TO-220AB |
| Jenis Pemasangan | Through Hole | Through Hole |
| Packing | Tube | — |
| Typical Applications | Power supply, switching applications | — |
| Status RoHS | [DATA_NEEDED: RoHS compliance status] | Compliant (PbF suffix) |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IRFB7534PBF |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) max | — | 60 V |
| Continuous Drain Current (ID) at Tc=25C | — | 195 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Power Dissipation (PD) at Tc=25C | — | 294 W |
| On-Resistance RDS(on) max at VGS=10V | — | 2.4 mOhm |
| Gate Threshold Voltage VGS(th) | — | 3.7 V (typ) |
| Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Avalanche Energy Rated | — | Yes |
| Gambaran Suhu Operasi | — | -55C to +175C |
| Aras MSL | — | MSL1 (unlimited floor life) |