FDP030N06 vs IRFB7534PBF Karşılaştırma
Ayrıntılı yan yana karşılaştırma FDP030N06 tarafından onsemi ve IRFB7534PBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | FDP030N06 | IRFB7534PBF |
|---|---|---|
| Marka | onsemi | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| FET Type | N-Channel MOSFET | — |
| Technology | PowerTrench (Trench) | StrongIRFET™ (planar N-channel) |
| Drain to Source Voltage (Vdss) | 60 V | — |
| Continuous Drain Current (Id) @ 25C | 120 A (Tc) | — |
| Continuous Drain Current (datasheet rating) | 193 A (Tc, datasheet title rating) | — |
| RDS(on) Max @ Id, Vgs | 3.2 mOhm | — |
| RDS(on) Typ | 2.6 mOhm | — |
| Power Dissipation (Tc) | 231 W (Tc) | — |
| Gate Drive Type | Standard level gate drive | — |
| Switching Speed | Fast | — |
| Gate Input Resistance | Low gate input resistance (low gate charge) | — |
| Avalanche Test | 100% avalanche tested | — |
| Paket | TO-220-3 (3+Tab) | TO-220AB |
| Montaj Türü | Through Hole | Through Hole |
| Packing | Tube | — |
| Typical Applications | Power supply, switching applications | — |
| RoHS Durumu | [DATA_NEEDED: RoHS compliance status] | Compliant (PbF suffix) |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IRFB7534PBF |
| Transistor Türü | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) max | — | 60 V |
| Continuous Drain Current (ID) at Tc=25C | — | 195 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Power Dissipation (PD) at Tc=25C | — | 294 W |
| On-Resistance RDS(on) max at VGS=10V | — | 2.4 mOhm |
| Gate Threshold Voltage VGS(th) | — | 3.7 V (typ) |
| Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Avalanche Energy Rated | — | Yes |
| İşletim Sıcaklığı Aralığı | — | -55C to +175C |
| MSL Seviyesi | — | MSL1 (unlimited floor life) |