FDP030N06 vs IRFB7534PBF 比較

詳細並排比較 FDP030N06 由 onsemi 與 IRFB7534PBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 FDP030N06 IRFB7534PBF
品牌 onsemi Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel MOSFET —
Technology PowerTrench (Trench) StrongIRFET™ (planar N-channel)
Drain to Source Voltage (Vdss) 60 V —
Continuous Drain Current (Id) @ 25C 120 A (Tc) —
Continuous Drain Current (datasheet rating) 193 A (Tc, datasheet title rating) —
RDS(on) Max @ Id, Vgs 3.2 mOhm —
RDS(on) Typ 2.6 mOhm —
Power Dissipation (Tc) 231 W (Tc) —
Gate Drive Type Standard level gate drive —
Switching Speed Fast —
Gate Input Resistance Low gate input resistance (low gate charge) —
Avalanche Test 100% avalanche tested —
封裝 TO-220-3 (3+Tab) TO-220AB
安裝類型 Through Hole Through Hole
Packing Tube —
Typical Applications Power supply, switching applications —
RoHS 狀態 [DATA_NEEDED: RoHS compliance status] Compliant (PbF suffix)
Manufacturer — Infineon Technologies
Part Number — IRFB7534PBF
電晶體類型 — N-Channel MOSFET
Drain-Source Voltage (VDS) max — 60 V
Continuous Drain Current (ID) at Tc=25C — 195 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
Power Dissipation (PD) at Tc=25C — 294 W
On-Resistance RDS(on) max at VGS=10V — 2.4 mOhm
Gate Threshold Voltage VGS(th) — 3.7 V (typ)
Gate Charge Qg — [DATA_NEEDED: total gate charge]
Avalanche Energy Rated — Yes
工作溫度範圍 — -55C to +175C
MSL 等級 — MSL1 (unlimited floor life)

資料表與資源

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