IPN95R1K2P7ATMA1 vs IPN95R3K7P7ATMA1 Perbandingan
Perbandingan bersamaan detil IPN95R1K2P7ATMA1 dari Infineon dan IPN95R3K7P7ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPN95R1K2P7ATMA1 | IPN95R3K7P7ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | CoolMOS P7 (Super Junction) | Super-junction (CoolMOS P7) |
| Drain-to-Source Voltage (V_DSS) | 950 V | — |
| Continuous Drain Current (I_D) at T_C | 6 A | — |
| Maximum On-Resistance R_DS(on) at V_GS=10V | 1200 mOhm (1.2 Ohm) | — |
| Gate Drive Voltage (max R_DS(on)) | 10 V | — |
| Power Dissipation (T_C) | 7 W | — |
| Paket | SOT-223-3 (PG-SOT223) | PG-SOT223 (3-pin + tab, surface mount) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 3 (2 + Tab) | — |
| Series | CoolMOS P7 | CoolMOS P7 |
| Rentang Suhu Kerja | -55C to +150C | — |
| Packaging | Tape & Reel | — |
| Status RoHS | Compliant | Compliant |
| Part Status | Active | — |
| Manufacturer | — | Infineon Technologies |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 950 V |
| Continuous Drain Current (ID) at Tc | — | 2.0 A |
| Power Dissipation (Pd) at Tc | — | 6 W |
| On-State Resistance (RDS(on)) max | — | 3700 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) typ | — | [DATA_NEEDED: VGS(th) typ] |
| Suhu Hubung Kerja | — | -55 C to +150 C |
| Lead-Free | — | Yes |
| Level MSL | — | [DATA_NEEDED: MSL rating] |