IPN95R1K2P7ATMA1 vs IPN95R3K7P7ATMA1 比較
詳細並排比較 IPN95R1K2P7ATMA1 由 Infineon 與 IPN95R3K7P7ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPN95R1K2P7ATMA1 | IPN95R3K7P7ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | — |
| Technology | CoolMOS P7 (Super Junction) | Super-junction (CoolMOS P7) |
| Drain-to-Source Voltage (V_DSS) | 950 V | — |
| Continuous Drain Current (I_D) at T_C | 6 A | — |
| Maximum On-Resistance R_DS(on) at V_GS=10V | 1200 mOhm (1.2 Ohm) | — |
| Gate Drive Voltage (max R_DS(on)) | 10 V | — |
| Power Dissipation (T_C) | 7 W | — |
| 封裝 | SOT-223-3 (PG-SOT223) | PG-SOT223 (3-pin + tab, surface mount) |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 3 (2 + Tab) | — |
| Series | CoolMOS P7 | CoolMOS P7 |
| 工作溫度範圍 | -55C to +150C | — |
| Packaging | Tape & Reel | — |
| RoHS 狀態 | Compliant | Compliant |
| Part Status | Active | — |
| Manufacturer | — | Infineon Technologies |
| 電晶體類型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 950 V |
| Continuous Drain Current (ID) at Tc | — | 2.0 A |
| Power Dissipation (Pd) at Tc | — | 6 W |
| On-State Resistance (RDS(on)) max | — | 3700 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) typ | — | [DATA_NEEDED: VGS(th) typ] |
| 工作接面溫度 | — | -55 C to +150 C |
| Lead-Free | — | Yes |
| MSL 等級 | — | [DATA_NEEDED: MSL rating] |