IPN95R1K2P7ATMA1 vs IPN95R3K7P7ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPN95R1K2P7ATMA1 sa pamamagitan ng Infineon at IPN95R3K7P7ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPN95R1K2P7ATMA1 IPN95R1K2P7ATMA1 - 950V CoolMOS P7 N-Channel MOSFET | Infineon

IPN95R1K2P7ATMA1 - 950V CoolMOS P7 N-Channel MOSFET | Infineon

IPN95R1K2P7ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPN95R1K2P7ATMA1 IPN95R3K7P7ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel —
Technology CoolMOS P7 (Super Junction) Super-junction (CoolMOS P7)
Drain-to-Source Voltage (V_DSS) 950 V —
Continuous Drain Current (I_D) at T_C 6 A —
Maximum On-Resistance R_DS(on) at V_GS=10V 1200 mOhm (1.2 Ohm) —
Gate Drive Voltage (max R_DS(on)) 10 V —
Power Dissipation (T_C) 7 W —
Packhaging SOT-223-3 (PG-SOT223) PG-SOT223 (3-pin + tab, surface mount)
Uri ng Pagpapasok Surface Mount Surface Mount
Bilang ng Pin 3 (2 + Tab) —
Series CoolMOS P7 CoolMOS P7
Hanay ng Temperature na Operasyon -55C to +150C —
Packaging Tape & Reel —
Tindminan RoHS Compliant Compliant
Part Status Active —
Manufacturer — Infineon Technologies
Uri ng Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 950 V
Continuous Drain Current (ID) at Tc — 2.0 A
Power Dissipation (Pd) at Tc — 6 W
On-State Resistance (RDS(on)) max — 3700 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) typ — [DATA_NEEDED: VGS(th) typ]
Temperature ng Junction na Operasyon — -55 C to +150 C
Lead-Free — Yes
Level ng MSL — [DATA_NEEDED: MSL rating]

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