IPN95R1K2P7ATMA1 vs IPN95R3K7P7ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPN95R1K2P7ATMA1 disebabkan oleh Infineon dan IPN95R3K7P7ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPN95R1K2P7ATMA1 | IPN95R3K7P7ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | CoolMOS P7 (Super Junction) | Super-junction (CoolMOS P7) |
| Drain-to-Source Voltage (V_DSS) | 950 V | — |
| Continuous Drain Current (I_D) at T_C | 6 A | — |
| Maximum On-Resistance R_DS(on) at V_GS=10V | 1200 mOhm (1.2 Ohm) | — |
| Gate Drive Voltage (max R_DS(on)) | 10 V | — |
| Power Dissipation (T_C) | 7 W | — |
| Kemasan | SOT-223-3 (PG-SOT223) | PG-SOT223 (3-pin + tab, surface mount) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kiraan Pin | 3 (2 + Tab) | — |
| Series | CoolMOS P7 | CoolMOS P7 |
| Gambaran Suhu Operasi | -55C to +150C | — |
| Packaging | Tape & Reel | — |
| Status RoHS | Compliant | Compliant |
| Part Status | Active | — |
| Manufacturer | — | Infineon Technologies |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 950 V |
| Continuous Drain Current (ID) at Tc | — | 2.0 A |
| Power Dissipation (Pd) at Tc | — | 6 W |
| On-State Resistance (RDS(on)) max | — | 3700 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) typ | — | [DATA_NEEDED: VGS(th) typ] |
| Suhu Hubungan Operasi | — | -55 C to +150 C |
| Lead-Free | — | Yes |
| Aras MSL | — | [DATA_NEEDED: MSL rating] |