K4A8G165WB-BCWE vs H5AN8G6NAFR Perbandingan
Perbandingan bersamaan detil K4A8G165WB-BCWE dari Samsung Electronics dan H5AN8G6NAFR dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4A8G165WB-BCWE - 8Gb DDR4 3200Mbps 96FBGA DRAM | Samsung
K4A8G165WB-BCWE ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | K4A8G165WB-BCWE | H5AN8G6NAFR |
|---|---|---|
| Merek | Samsung Electronics | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | In Stock | — |
| Harga Unit (USD) | $6,25 | — |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Ukuran Memori | 8 Gb | — |
| Memory Organization | 512M x 16 | — |
| Laju Data | 3200 Mbps/pin | 2400 MT/s |
| Tegangan Pemuat | 1.2 V | 1.2 V |
| Access Time | 19 ns | — |
| Antarmuka | Parallel | — |
| Paket | 96FBGA | 96-ball FBGA |
| Suhu Kerja | 0C to +85C | 0°C to +85°C |
| Tipe Mounting | Surface Mount | — |
| Memory Format | DRAM (volatile) | — |
| Technology | DDR4 SDRAM B-die | — |
| Prefetch | 8n | — |
| Refresh | Self-refresh supported | — |
| Termination | On-die termination (ODT) | — |
| Status RoHS | [DATA_NEEDED: RoHS compliance statement] | — |
| Level MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Density | — | 8 Gb |
| Organisasi | — | 512M x 16 |
| Lead-Free | — | Yes |
| Bebas Halogen | — | Yes |
| RoHS Compliant | — | Yes |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| Dynamic ODT | — | Yes |
| ZQ Calibration | — | Yes |
| CRC | — | Yes |
| Write Leveling | — | Yes |