K4A8G165WB-BCWE vs H5AN8G6NAFR Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G165WB-BCWE disebabkan oleh Samsung Electronics dan H5AN8G6NAFR disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4A8G165WB-BCWE - 8Gb DDR4 3200Mbps 96FBGA DRAM | Samsung
K4A8G165WB-BCWE ✓ Aktif
Pengandingan Spesifikasi
| Parametr | K4A8G165WB-BCWE | H5AN8G6NAFR |
|---|---|---|
| Merek | Samsung Electronics | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | In Stock | — |
| Harga Unit (USD) | $6.25 | — |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Saiz Ingatan | 8 Gb | — |
| Memory Organization | 512M x 16 | — |
| Kadar Data | 3200 Mbps/pin | 2400 MT/s |
| Tegangan Pemberi Arus | 1.2 V | 1.2 V |
| Access Time | 19 ns | — |
| Antaramuka | Parallel | — |
| Kemasan | 96FBGA | 96-ball FBGA |
| Suhu Operasi | 0C to +85C | 0°C to +85°C |
| Jenis Pemasangan | Surface Mount | — |
| Memory Format | DRAM (volatile) | — |
| Technology | DDR4 SDRAM B-die | — |
| Prefetch | 8n | — |
| Refresh | Self-refresh supported | — |
| Termination | On-die termination (ODT) | — |
| Status RoHS | [DATA_NEEDED: RoHS compliance statement] | — |
| Aras MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Density | — | 8 Gb |
| Organisasi | — | 512M x 16 |
| Lead-Free | — | Yes |
| Boson Bebas | — | Yes |
| RoHS Compliant | — | Yes |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| Dynamic ODT | — | Yes |
| ZQ Calibration | — | Yes |
| CRC | — | Yes |
| Write Leveling | — | Yes |