K4B4G1646E-BYMA vs AS4C256M16D3L-12BCNTR Perbandingan
Perbandingan bersamaan detil K4B4G1646E-BYMA dari Samsung Electronics dan AS4C256M16D3L-12BCNTR dari Alliance Memory. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Alliance Memory
AS4C256M16D3L-12BCNTR - 4Gbit DDR3L SDRAM 96-FBGA | Alliance Memory
AS4C256M16D3L-12BCNTR ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | K4B4G1646E-BYMA | AS4C256M16D3L-12BCNTR |
|---|---|---|
| Merek | Samsung Electronics | Alliance Memory |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $14,32 | — |
| Tipe Memori | DDR3L SDRAM | SDRAM - DDR3L |
| Density | 4 Gb | — |
| Organisasi | 256M x 16 | 256M x 16 |
| Tegangan Pemuat | 1.35 V (1.28 V to 1.575 V) | 1.283V ~ 1.45V |
| Clock Frequency | 933 MHz | 800 MHz |
| Laju Data | 1866 Mbps/pin | — |
| Suhu Kerja | 0°C to +95°C | 0°C to +95°C |
| Operating Current | 14 mA | — |
| Standby Current | 2 mA, 3 mA | — |
| Paket | FBGA-96 | 96-FBGA (9x13mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| RoHS | Compliant | — |
| Latensi CAS | [DATA_NEEDED: CAS Latency] | [DATA_NEEDED: CAS Latency] |
| Burst Length | [DATA_NEEDED: Burst Length] | — |
| Jumlah Pin | 96 | — |
| Ukuran Memori | — | 4Gbit (256M x 16) |
| Antarmuka | — | Parallel |
| Access Time | — | 20 ns |
| Lebar Bus Data | — | 16 bit |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Arus Pemuat | — | [DATA_NEEDED: Supply Current] |