K4B4G1646E-BYMA vs AS4C256M16D3L-12BCNTR Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4B4G1646E-BYMA disebabkan oleh Samsung Electronics dan AS4C256M16D3L-12BCNTR disebabkan oleh Alliance Memory. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Alliance Memory
AS4C256M16D3L-12BCNTR - 4Gbit DDR3L SDRAM 96-FBGA | Alliance Memory
AS4C256M16D3L-12BCNTR ✓ AktifPengandingan Spesifikasi
| Parametr | K4B4G1646E-BYMA | AS4C256M16D3L-12BCNTR |
|---|---|---|
| Merek | Samsung Electronics | Alliance Memory |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $14.32 | — |
| Jenis Ingatan | DDR3L SDRAM | SDRAM - DDR3L |
| Density | 4 Gb | — |
| Organisasi | 256M x 16 | 256M x 16 |
| Tegangan Pemberi Arus | 1.35 V (1.28 V to 1.575 V) | 1.283V ~ 1.45V |
| Clock Frequency | 933 MHz | 800 MHz |
| Kadar Data | 1866 Mbps/pin | — |
| Suhu Operasi | 0°C to +95°C | 0°C to +95°C |
| Operating Current | 14 mA | — |
| Standby Current | 2 mA, 3 mA | — |
| Kemasan | FBGA-96 | 96-FBGA (9x13mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| RoHS | Compliant | — |
| Latensi CAS | [DATA_NEEDED: CAS Latency] | [DATA_NEEDED: CAS Latency] |
| Burst Length | [DATA_NEEDED: Burst Length] | — |
| Bilangan Pin | 96 | — |
| Saiz Ingatan | — | 4Gbit (256M x 16) |
| Antaramuka | — | Parallel |
| Access Time | — | 20 ns |
| Lebar Bus Data | — | 16 bit |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Arus Pemberi Arus | — | [DATA_NEEDED: Supply Current] |