K4RAH086VB-BCQK vs H5CG48MEBDX014N Perbandingan
Perbandingan bersamaan detil K4RAH086VB-BCQK dari Samsung Electronics dan H5CG48MEBDX014N dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K4RAH086VB-BCQK | H5CG48MEBDX014N |
|---|---|---|
| Merek | Samsung Electronics | SK hynix |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | In Stock | — |
| Harga Unit (USD) | $41,02 | — |
| Tipe Memori | DDR5 SDRAM (Volatile DRAM) | DDR5 SDRAM |
| Ukuran Memori | 16 Gb | — |
| Memory Organization | 2G x 8 | — |
| Laju Data | 4800 Mbps | 4800 Mbps |
| Tegangan Pemuat | 1.1 V | 1.1 V |
| Antarmuka | Parallel | — |
| Technology | DDR5 | — |
| ECC | On-die ECC | — |
| Paket | FBGA-82 | FBGA-82 (11 x 10 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Product Status | Active | — |
| Operating Mode | DLL Enabled mode | — |
| Series | K4RAH0x6VB (DDR5 16Gb B-die family) | — |
| Packaging | Tray | — |
| Status RoHS | [DATA_NEEDED: RoHS compliance status] | Compliant |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | 0C to +95C |
| Refresh Rate | [DATA_NEEDED: refresh specification] | — |
| Density | — | 16 Gbit |
| Organisasi | — | 2G x 8 |
| Row Address | — | 12 bits |
| Column Address | — | 9 bits |
| Die Generation | — | M-die |
| Tipe Antarmuka | — | Parallel, DDR5 |
| Memory Class | — | Synchronous DRAM |
| Speed Class | — | DDR5-4800 (PC5) |