K4RAH086VB-BCQK vs H5CG48MEBDX014N 比較
詳細並排比較 K4RAH086VB-BCQK 由 Samsung Electronics 與 H5CG48MEBDX014N 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4RAH086VB-BCQK | H5CG48MEBDX014N |
|---|---|---|
| 品牌 | Samsung Electronics | SK hynix |
| 類別 | DRAM | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 庫存狀態 | In Stock | — |
| 單價 (USD) | $41.02 | — |
| 記憶體類型 | DDR5 SDRAM (Volatile DRAM) | DDR5 SDRAM |
| 記憶體容量 | 16 Gb | — |
| Memory Organization | 2G x 8 | — |
| 資料速率 | 4800 Mbps | 4800 Mbps |
| 供應電壓 | 1.1 V | 1.1 V |
| 介面 | Parallel | — |
| Technology | DDR5 | — |
| ECC | On-die ECC | — |
| 封裝 | FBGA-82 | FBGA-82 (11 x 10 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| Product Status | Active | — |
| Operating Mode | DLL Enabled mode | — |
| Series | K4RAH0x6VB (DDR5 16Gb B-die family) | — |
| Packaging | Tray | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS compliance status] | Compliant |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | 0C to +95C |
| Refresh Rate | [DATA_NEEDED: refresh specification] | — |
| Density | — | 16 Gbit |
| 組織 | — | 2G x 8 |
| Row Address | — | 12 bits |
| Column Address | — | 9 bits |
| Die Generation | — | M-die |
| 介面類型 | — | Parallel, DDR5 |
| Memory Class | — | Synchronous DRAM |
| Speed Class | — | DDR5-4800 (PC5) |