K4RAH086VB-BCQK vs H5CG48MEBDX014N Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4RAH086VB-BCQK disebabkan oleh Samsung Electronics dan H5CG48MEBDX014N disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4RAH086VB-BCQK | H5CG48MEBDX014N |
|---|---|---|
| Merek | Samsung Electronics | SK hynix |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | In Stock | — |
| Harga Unit (USD) | $41.02 | — |
| Jenis Ingatan | DDR5 SDRAM (Volatile DRAM) | DDR5 SDRAM |
| Saiz Ingatan | 16 Gb | — |
| Memory Organization | 2G x 8 | — |
| Kadar Data | 4800 Mbps | 4800 Mbps |
| Tegangan Pemberi Arus | 1.1 V | 1.1 V |
| Antaramuka | Parallel | — |
| Technology | DDR5 | — |
| ECC | On-die ECC | — |
| Kemasan | FBGA-82 | FBGA-82 (11 x 10 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Product Status | Active | — |
| Operating Mode | DLL Enabled mode | — |
| Series | K4RAH0x6VB (DDR5 16Gb B-die family) | — |
| Packaging | Tray | — |
| Status RoHS | [DATA_NEEDED: RoHS compliance status] | Compliant |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | 0C to +95C |
| Refresh Rate | [DATA_NEEDED: refresh specification] | — |
| Density | — | 16 Gbit |
| Organisasi | — | 2G x 8 |
| Row Address | — | 12 bits |
| Column Address | — | 9 bits |
| Die Generation | — | M-die |
| Jenis Antaramuka | — | Parallel, DDR5 |
| Memory Class | — | Synchronous DRAM |
| Speed Class | — | DDR5-4800 (PC5) |